Interferometric testing of EUV lithography cameras

Alastair A. MacDowell; Obert R. Wood II; John E. Bjorkholm

doi:10.1117/12.279372

1 November 1997 Interferometric testing of EUV lithography cameras

Alastair A. MacDowell, Obert R. Wood II, John E. Bjorkholm

Proceedings Volume 3152, Materials, Manufacturing, and Measurement for Synchrotron Radiation Mirrors; (1997) https://doi.org/10.1117/12.279372
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States

Abstract

Phase-measuring, lateral-shearing interferometry has been carried out on a multilayer-coated extreme-ultraviolet (EUV) Schwarzschild camera at the multilayer coating's center wavelength. The measured wavefront error was 0.096 waves rms at a wavelength of 13.5 nm. The interferometer employed in the measurement was developed to evaluate the image quality and improve the alignment of cameras for EUV lithography and was previously shown to have a sensitivity of 0.021 waves rms or better at an operating wavelength of 13 nm.

Citation Download Citation

Alastair A. MacDowell, Obert R. Wood II, and John E. Bjorkholm "Interferometric testing of EUV lithography cameras", Proc. SPIE 3152, Materials, Manufacturing, and Measurement for Synchrotron Radiation Mirrors, (1 November 1997); https://doi.org/10.1117/12.279372

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