Optimization of BARC for nonplanar lithography by three-dimensional electromagnetic simulation

Michael S. Yeung; Eytan Barouch

doi:10.1117/12.280555

14 August 1997 Optimization of BARC for nonplanar lithography by three-dimensional electromagnetic simulation

Michael S. Yeung, Eytan Barouch

Proceedings Volume 3183, Microlithographic Techniques in IC Fabrication; (1997) https://doi.org/10.1117/12.280555
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore

Abstract

A rigorous 3D nonplanar lithography simulator based on the integral equation approach to electromagnetic scattering is presented. The novelty of our approach lies in computing the scattering of each diffraction order separately during the initial setup phase of a simulation. Thereafter, the image intensity distributions for arbitrary mask geometries and defocus settings can be generated readily by appropriate superposition of the scattering results for the various diffraction orders. This capability allows one to simulate the effects of mask bias and defocus on a given BARC process efficiently.

Citation Download Citation

Michael S. Yeung and Eytan Barouch "Optimization of BARC for nonplanar lithography by three-dimensional electromagnetic simulation", Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); https://doi.org/10.1117/12.280555

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