Paper
24 July 1998 Large-area x-ray image sensing using a Pbl2 photoconductor
Robert A. Street, Kanai S. Shah, Steve E. Ready, Raj B. Apte, Paul R. Bennett, Misha Klugerman, Yuriy N. Dmitriyev
Author Affiliations +
Abstract
We report the fabrication and evaluation of a Pbl2 imager using large area amorphous silicon technology. This approach uses a thick Pbl2 x-ray photoconductor to absorb x-rays and collect ionization charge under the action of an applied field, while amorphous silicon thin film transistors (TFT) provide a matrix-addressed read out of the signal to external electronics. The x-ray sensitivity of Pbl2 is high, and mobility-lifetime product is large enough to yield a high charge collection at low applied fields. The test arrays used to evaluate Pbl2 have 256 X 256 pixels of size 200 microns. Each pixel contains an amorphous silicon switching transistor, gate and data addressing lines, a charge storage capacitor and a metal pad to contact the Pbl2 layer. Early evaluation of the image sensor indicates the promise of Pbl2 but indicates that reduction of the leakage current is important.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert A. Street, Kanai S. Shah, Steve E. Ready, Raj B. Apte, Paul R. Bennett, Misha Klugerman, and Yuriy N. Dmitriyev "Large-area x-ray image sensing using a Pbl2 photoconductor", Proc. SPIE 3336, Medical Imaging 1998: Physics of Medical Imaging, (24 July 1998); https://doi.org/10.1117/12.317027
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Cited by 18 scholarly publications.
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KEYWORDS
X-rays

Photoresistors

Absorption

X-ray imaging

Amorphous silicon

Imaging systems

Image sensors

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