Correlation between dislocations and luminescence in GaN

Maosheng Hao; Tamoya Sugahara; Satoru Tottori; Masaaki Nozaki; Satoshi Kurai; Katsushi Nishino; Yoshiki Naoi; Shiro Sakai

doi:10.1117/12.311002

22 June 1998 Correlation between dislocations and luminescence in GaN

Maosheng Hao, Tamoya Sugahara, Satoru Tottori, Masaaki Nozaki, Satoshi Kurai, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai

Author Affiliations +

Proceedings Volume 3419, Optoelectronic Materials and Devices; 34190J (1998) https://doi.org/10.1117/12.311002
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan

Abstract

A GaN film grown on sapphire substrate by metalorganic chemical vapor deposition have been investigated by the plan-view TEM and CL. Direct evidence of dislocation being a non-radiative recombination center, have been provided. A bulk GaN grown by the sublimation method and a homoepitaxial GaN grown by hydride vapor phase epitaxy have also been investigated by TEM, the x-ray diffraction and PL. The results confirm that it is not the dislocations but the point defects that are responsible for the yellow luminescence of the grown GaN. It was found, in a cross- section TEM image of a GaN/Al₂O₃ film, that there are many precipitates gathered around a mixed dislocation. The precipitates might be formed by the segregation of point defects around dislocations. The precipitates might be formed by the segregation of point defects around dislocations. Since most of the point defects in GaN seems to segregate around the dislocations, dislocations can reduce the local concentration of the point defects in the no dislocation region. In this case, the optical property of GaN might be improved by the existence of the dislocation.

Citation Download Citation

Maosheng Hao, Tamoya Sugahara, Satoru Tottori, Masaaki Nozaki, Satoshi Kurai, Katsushi Nishino, Yoshiki Naoi, and Shiro Sakai "Correlation between dislocations and luminescence in GaN", Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190J (22 June 1998); https://doi.org/10.1117/12.311002

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available