Ultrathin Ir3Si4 silicide films for infrared detection

Karl-Martin Mahlein; Dieter Woerle; Thomas Hierl; Max J. Schulz

doi:10.1117/12.328009

26 October 1998 Ultrathin Ir₃Si₄ silicide films for infrared detection

Karl-Martin Mahlein, Dieter Woerle, Thomas Hierl, Max J. Schulz

Proceedings Volume 3436, Infrared Technology and Applications XXIV; (1998) https://doi.org/10.1117/12.328009
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

A novel silicide phase Ir₃Si₄ suitable for medium wave infrared (MWIR, (lambda) equals 3 micrometer - 5 micrometer) detection was prepared and characterized. Iridium is deposited on p-Si(100) substrates at various temperatures in the range from 420 degrees Celsius to 485 degrees Celsius under ultrahigh vacuum conditions. The metallic phase is formed by interdiffusion and reaction of Ir and Si. The phase is identified to Ir₃Si₄ by Rutherford backscattering spectrometry. Ir₃Si₄ films thinner than 10 nm show Schottky barrier heights as low as (Phi) _Ph equals 165 meV for photoemission into the Si valence band. Dark current densities are measured to j_R less than 1 (DOT) 10^-9 A cm^-2 (at reverse bias 5 V and detector operation temperature 50 K). The infrared test detectors exhibit responsivities (lambda equals 4 micrometer) of up to 20 mA W^-1 at 5 V. The temperature resolution of the test detectors -- front illuminated and without antireflection coating and optical resonator -- is improved to a noise equivalent temperature difference NETD_300K approximately equals 53 mK (at 50 Hz) compared to 75 mK of equivalent test detectors fabricated by common HV-PtSi deposition.

Citation Download Citation

Karl-Martin Mahlein, Dieter Woerle, Thomas Hierl, and Max J. Schulz "Ultrathin Ir₃Si₄ silicide films for infrared detection", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); https://doi.org/10.1117/12.328009

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