Thin films of LiNbO3 prepared on SiO2/Si by sol-gel processing for active SOS device applications

Shi De Cheng; Chan Hin Kam; Yan Zhou; Yee Loy Lam; Yuen Chuen Chan; X. Z. Wang; Zhuo Sun

doi:10.1117/12.328774

4 December 1998 Thin films of LiNbO₃ prepared on SiO₂ /Si by sol-gel processing for active SOS device applications

Shi De Cheng, Chan Hin Kam, Yan Zhou, Yee Loy Lam, Yuen Chuen Chan, X. Z. Wang, Zhuo Sun

Proceedings Volume 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications; (1998) https://doi.org/10.1117/12.328774
Event: 1998 International Conference on Applications of Photonic Technology, 1998, Ottawa, Canada

Abstract

Thin films of lithium niobate are derived on SiO₂/Si substrate by the sol-gel method. The solution is prepared by mixing LiOC₂H₅ and Nb(OC₂H₅)₅. The films are deposited by spin coating and are annealed at different temperatures of 400 degree(s)C, 500 degree(s)C, 600 degree(s)C and 700 degree(s)C. The films are characterized by means of X-ray diffraction, atomic force microscopy and variable angle spectroscopic ellipsometry. The experimental results show that when the heat treatment temperature is about 500 degree(s)C, the films starts to crystallize and the desirable ferroelectric phase dominates. The crystalline size of the 500 degree(s)C annealed film ranges from 39 nm to 86 nm and the film is microscopically continuous and uniform. The refractive index of the film is found to be 1.83 at the wavelength of 633 nm. The nanocrystalline nature, the ferroelectric phase and the refractive index of the films make them potential candidates for active integrated optical component applications.

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Shi De Cheng, Chan Hin Kam, Yan Zhou, Yee Loy Lam, Yuen Chuen Chan, X. Z. Wang, and Zhuo Sun "Thin films of LiNbO₃ prepared on SiO₂ /Si by sol-gel processing for active SOS device applications", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); https://doi.org/10.1117/12.328774

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