Real-time spectroscopic reflectometer for end-point detection on multichamber deposition processes

Pierre Boher; Sebastien Noygues; Jean-Louis P. Stehle

doi:10.1117/12.324348

3 September 1998 Real-time spectroscopic reflectometer for end-point detection on multichamber deposition processes

Pierre Boher, Sebastien Noygues, Jean-Louis P. Stehle

Proceedings Volume 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV; (1998) https://doi.org/10.1117/12.324348
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

A new in-situ tool developed to control accurately the deposited thickness in a multichamber deposition process is presented. It is applied here to a BALZERS multichamber PECVD deposition system for the fabrication of gate structures for flat panel display applications. Based on a simple spectroscopic reflectometer it is composed of a xenon lamp, which is used to illuminate up to 20 optical fibers that enter to each reactor. A very simple optical setup allows illuminating the center of the glass substrates at 87 degrees of incidence from normal. After reflection, all the beams are focused on 20 others optical fibers that enter the same high-resolution prism spectrograph equipped with a multichannel detector. The reactor is selected using shutters. The signal reading and pretreatment is made using a DSP board. Regressions including backface reflection effect are performed in real time. Practical examples are given in the case of SiN_x and amorphous silicon depositions and the performances of the system are discussed.

Citation Download Citation

Pierre Boher, Sebastien Noygues, and Jean-Louis P. Stehle "Real-time spectroscopic reflectometer for end-point detection on multichamber deposition processes", Proc. SPIE 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV, (3 September 1998); https://doi.org/10.1117/12.324348

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