Analysis and simulation of the low-temperature performance of Si/SiGe HBTs for the integrated infrared receiver

Lixin Zhao; Chen Xu; Guo Gao; Deshu Zou; Jianxing Chen; Guangdi Shen; W. X. Ni; Goeran V. Hansson

doi:10.1117/12.318061

11 August 1998 Analysis and simulation of the low-temperature performance of Si/SiGe HBTs for the integrated infrared receiver

Lixin Zhao, Chen Xu, Guo Gao, Deshu Zou, Jianxing Chen, Guangdi Shen, W. X. Ni, Goeran V. Hansson

Author Affiliations +

Proceedings Volume 3553, Detectors, Focal Plane Arrays, and Imaging Devices II; (1998) https://doi.org/10.1117/12.318061
Event: Photonics China '98, 1998, Beijing, China

Abstract

The low temperature current gain and the low frequency noise are important parameters of the preamplifiers of the integrated IR receiver system. Si/Si_1-xGe_x heterojunction bipolar transistors (HBTs) have potential advantages used in the preamplifiers at low temperature. In this paper, we analyze the characteristics of the current gain and low frequency noise of Si/Si_1-xGe_xHBTs at low temperature. They are influenced by the following factors: (1) the energy band offset of the emitter-base junction; (2) the high doping effect, the low temperature freeze out effect in the emitter region and base region; (3) the influence of germanium (Ge) content and profile in the base region on the transport performance; (4) the Si/Si_1-xGe_x interface recombination currents and surface recombination currents; (5) the collector-base heterojunction barrier effect. Then we give the physical analysis model and noise analysis model of Si/Si_1-xGe_xHBTs at low temperature. Based on this, we present the equivalent circuit and equivalent noise circuit at low temperature and simulate and optimize the characteristics of the current gain and the noise of Si/Si_1-xGe_x HBT for IR integrated receiver system. The current gain (beta) max equals 300, and the low temperature current gain (beta) max equals 8100 at 77K, at high injection level. We optimize the design of Si/SiGe HBT-based monolithically integrated preamplifier applied to IR receiver system at low temperature.

Citation Download Citation

Lixin Zhao, Chen Xu, Guo Gao, Deshu Zou, Jianxing Chen, Guangdi Shen, W. X. Ni, and Goeran V. Hansson "Analysis and simulation of the low-temperature performance of Si/SiGe HBTs for the integrated infrared receiver", Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); https://doi.org/10.1117/12.318061

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available