Paper
19 October 1999 Exploratory search for improved oxidizing agents used in the reduction of surface leakage currents of CdZnTe detectors
Gomez W. Wright, Douglas Chinn, Bruce Andrew Brunett, Mark J. Mescher, James C. Lund, Richard W. Olsen, F. Patrick Doty, Tuviah E. Schlesinger, Ralph B. James, Kaushik Chattopadhyay, Robert Cam Wingfield, Arnold Burger
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Abstract
We have studied the ability of different oxidizing agents, other than H2O2 to reduce the surface leakage current of CdZnTe devices. All chemical treatments were performed in aqueous solutions, at room temperature, with weight percent concentrations of 2.5g/25ml. Before and after I-V curves were obtained. It was found that by increasing the basicity of the chemical treatment, greater reduction in surface leakage current occurred. The result show that these alternative chemical treatments reduced the surface leakage current as well as or better than H2O2 chemical treatment.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gomez W. Wright, Douglas Chinn, Bruce Andrew Brunett, Mark J. Mescher, James C. Lund, Richard W. Olsen, F. Patrick Doty, Tuviah E. Schlesinger, Ralph B. James, Kaushik Chattopadhyay, Robert Cam Wingfield, and Arnold Burger "Exploratory search for improved oxidizing agents used in the reduction of surface leakage currents of CdZnTe detectors", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366617
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Cited by 10 scholarly publications and 1 patent.
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KEYWORDS
Oxides

Sensors

Dielectrics

Gold

Resistance

Interfaces

Platinum

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