Paper
19 October 1999 Novel x-ray silicon detector for 2D imaging and high-resolution spectroscopy
Andrea Castoldi, Emilio Gatti, Chiara Guazzoni, Antonio Longoni, Pavel Rehak, Lothar Strueder
Author Affiliations +
Abstract
A novel x-ray silicon detector for 2D imaging has been recently proposed. The detector, called Controlled-Drift Detector, is operated in integrate-readout mode. Its basic feature is the fast transport of the integrated charge to the output electrode by means of a uniform drift field. The drift time of the charge packet identifies the pixel of incidence. A new architecture to implement the Controlled- Drift Detector concept will be presented. The potential wells for the integration of the signal charge are obtained by means of a suitable pattern of deep n-implants and deep p-implants. During the readout mode the signal electrons are transferred in the drift channel that flanks each column of potential wells where they drift towards the collecting electrode at constant velocity. The first experimental measurements demonstrate the successful integration, transfer and drift of the signal electrons. The low output capacitance of the readout electrode together with the on- chip front-end electronics allows high resolution spectroscopy of the detected photons.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrea Castoldi, Emilio Gatti, Chiara Guazzoni, Antonio Longoni, Pavel Rehak, and Lothar Strueder "Novel x-ray silicon detector for 2D imaging and high-resolution spectroscopy", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366588
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Sensors

Electrons

Electrodes

X-rays

X-ray detectors

Silicon

Imaging spectroscopy

RELATED CONTENT


Back to Top