Combinatorial methods in sol-gel technology

Juha T. Rantala; Terho K. Kololuoma; L. Kivimaki

doi:10.1117/12.385420

17 May 2000 Combinatorial methods in sol-gel technology

Juha T. Rantala, Terho K. Kololuoma, L. Kivimaki

Proceedings Volume 3941, Combinatorial and Composition Spread Techniques in Materials and Device Development; (2000) https://doi.org/10.1117/12.385420
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Sol-gel processing consists several variable parameters during materials synthesis and post processing steps. The sol-gel synthesis is rather sensitive for the parameters such as pH, temperature, type of catalyst, reaction time etc. However, this sensitivity can be taken as an advantage when developing and studying new materials and their properties. Furthermore, since the sol-gel technology mainly describes the fabrication of solid state materials from a liquid phase by applying metal alkoxides or metal salts as precursors, the post processing such as sintering has critical effects on the final form and properties of the solid material. Combinatorial chemistry and methods are valuable tools to estimate the effects of different variables and to build-up combinatorial libraries for the sol-gel technique. This paper generally describes potentials and the usage motivation of combinatorial chemistry in the sol-gel technology by taking into account some major steps in the synthesis and processing which are valuable for the estimation of the final product properties. Different kind of post processing steps in the combinatorial manner are studied in details. As an example the post processing of sol-gel derived semiconductor oxides and photosensitivity of hybrid sol-gel glasses are presented. The combinatorial treatment and measurement methods for these materials are explained.

Citation Download Citation

Juha T. Rantala, Terho K. Kololuoma, and L. Kivimaki "Combinatorial methods in sol-gel technology", Proc. SPIE 3941, Combinatorial and Composition Spread Techniques in Materials and Device Development, (17 May 2000); https://doi.org/10.1117/12.385420

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