Semiconducting ferroelectric SbSI quantum dots in organically modified TiO2 matrix

Hui Ye; Yuhuan Xu; John D. Mackenzie

doi:10.1117/12.384326

2 May 2000 Semiconducting ferroelectric SbSI quantum dots in organically modified TiO₂ matrix

Hui Ye, Yuhuan Xu, John D. Mackenzie

Proceedings Volume 3943, Sol-Gel Optics V; (2000) https://doi.org/10.1117/12.384326
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Semiconducting ferro electric antimony sulphoiodide (SbSI) microcrystallite doped organically modified TiO₂ thin film and bulk solids are successfully fabricated by the sol- gel process. Ferro electric SbSI crystallites have some attractive properties, including high dielectric permittivity, high electro-optical coefficient and high photoconductivity. SbSI is also an intrinsic semiconductor with a relatively narrow energy gap. If the crystal size is near its Bohr radius and the microcrystallites are dispersed in a suitable matrix, a dramatic improvement of the third order non linearity will be achieved due to the quantum confinement effect. It is clear that the SbSI quantum dot composites are good candidates for electro-optical devices. Glycidoxypropyltrimetroxysilane modified TiO₂ is used as the matrix and SbSI is synthesized in situ by using SbI₃ SC9NH₂)₂ and H₂S gas. The size is controlled by the heat-treatment conditions and is characterized by the XRD and HRTEM measurements. The optical absorption spectrum gives evidence of the quantum confinement effect. The third order susceptibility of the SbSI quantum dot is measured by the degenerate four wave mixing method.

Citation Download Citation

Hui Ye, Yuhuan Xu, and John D. Mackenzie "Semiconducting ferroelectric SbSI quantum dots in organically modified TiO₂ matrix", Proc. SPIE 3943, Sol-Gel Optics V, (2 May 2000); https://doi.org/10.1117/12.384326

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