Semiconducting ferroelectric SbSI quantum dots in amorphous matrix: preparation and nonlinear optical properties

Hui Ye; Ligong Yang; Peifu Gu

doi:10.1117/12.483042

17 September 2002 Semiconducting ferroelectric SbSI quantum dots in amorphous matrix: preparation and nonlinear optical properties

Hui Ye, Ligong Yang, Peifu Gu

Author Affiliations +

Proceedings Volume 4918, Materials, Devices, and Systems for Display and Lighting; (2002) https://doi.org/10.1117/12.483042
Event: Photonics Asia, 2002, Shanghai, China

Abstract

Semiconducting ferroelectric antimony sulphoiodide (SbSI) microcrystallite doped organically modified TiO₂ thin films were successfully fabricated with the sol-gel process. Ferroelectric SbSI crystallites have some attractive properties, including high dielectric permittivity, high electro-optical coefficient and high photoconductivity. SbSI is also an intrinsic semiconductor with a relatively narrow eneryg gap. The Bohr radius of the SbSI crystal was calculated larger than other semiconductors due to its large dielectric constant. If the crystal size is smaller than its Bohr radius and the microcrystallite are dispersed in a suitable matrix, a dramatic improvement of the nonlinear three-order nonlinearity will be achieved due to the quantum confinement effect. The SbSI quantum dot composites were proved to be good candidates for nonlinear and electro-optical devices. Glycidopropyltrimetroxysilane modified TiO₂ was chosen as the matrix and SbSI was synthesized in situ by using SbI₃, SC(NH₂)₂. The materials in thin film were heat-treated in different conditions and the size of the microcrystallite was characterized by the XRD. A value of 3.5pm/V of effective transverse electro-optical coefficient r_eff for the nano-composite containing 8 wt percent of antimony sulfide iodide was measured. The third-order nonlinear optical susceptibility of the SbSI quantum dot thin film was measured by degenerate four-wave mixing at 532nm using a frequency double Nd:YAG laser beams with a pulse width of around 10ns, the x⁽³⁾ value of 3 μm sample was measured to be 6 × 10^-11esu.

Citation Download Citation

Hui Ye, Ligong Yang, and Peifu Gu "Semiconducting ferroelectric SbSI quantum dots in amorphous matrix: preparation and nonlinear optical properties", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); https://doi.org/10.1117/12.483042

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available