Solar-blind AlxGa1-xN p-i-n photodetectors grown on LEO and non-LEO GaN

Peter M. Sandvik; Danielle Walker; Patrick Kung; Kan Mi; Fatemeh Shahedipour; Vipan Kumar; Xinghong Zhang; Jacqueline E. Diaz; Christopher Louis Jelen; Manijeh Razeghi

doi:10.1117/12.382126

13 April 2000 Solar-blind Al_xGa_1-xN p-i-n photodetectors grown on LEO and non-LEO GaN

Peter M. Sandvik, Danielle Walker, Patrick Kung, Kan Mi, Fatemeh Shahedipour, Vipan Kumar, Xinghong Zhang, Jacqueline E. Diaz, Christopher Louis Jelen, Manijeh Razeghi

Author Affiliations +

Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382126
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

There is currently a strong interest in developing solid- state, UV photodetectors for a variety of applications. Some of these are early missile threat warning, covet space to space communications, flame monitoring, UV radiation monitoring and chemical/biological reagent detection. The III-Nitride material system is an excellent candidate for such applications due to its wide, reagent detection. The III-Nitride material system is an excellent candidate for such applications due to its wide, direct bandgaps and robust material nature. However, despite many inherent material advantages, the III-Nitride material system typically suffers from a large number of extended defects which degrade material quality and device performance. One technique aimed at reducing defect densities in these materials is lateral epitaxial overgrowth (LEO). In this work, we present a preliminary comparison between AlGaN UV, solar-blind p-i-n photodiodes fabricated form LEO GaN and non-LEO GaN. Improvements in both responsivity and rejection ratio are observed, however, further device improvements are necessary. For these, we focus on the optimization of the p- i-n structure and a reduction in contact resistivity to p- GaN and p-AlGaN layers. By improving the structure of the device, GaN p-i-n photodiodes were fabricated and demonstrate 86 percent internal quantum efficiency at 362 nm and a peak to visible rejection ratio of 10⁵. Contact treatments have reduced the contact resistivity to p-GaN and p-AlGaN by over one order of magnitude form our previous results.

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Peter M. Sandvik, Danielle Walker, Patrick Kung, Kan Mi, Fatemeh Shahedipour, Vipan Kumar, Xinghong Zhang, Jacqueline E. Diaz, Christopher Louis Jelen, and Manijeh Razeghi "Solar-blind Al_xGa_1-xN p-i-n photodetectors grown on LEO and non-LEO GaN", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); https://doi.org/10.1117/12.382126

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