Ultraviolet photodetectors based on GaN and AlxGa1-xN epitaxial layers

N. M. Shmidt; W. V. Lundin; A. V. Sakharov; A. S. Usikov; E. E. Zavarin; A. V. Govorkov; A. Ya. Polyakov; N. B. Smirnov

doi:10.1117/12.407713

28 November 2000 Ultraviolet photodetectors based on GaN and Al_xGa_1-xN epitaxial layers

N. M. Shmidt, W. V. Lundin, A. V. Sakharov, A. S. Usikov, E. E. Zavarin, A. V. Govorkov, A. Ya. Polyakov, N. B. Smirnov

Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407713
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation

Abstract

The effect of epilayer structural peculiarities on electro- physical properties of the epilayers and on parameters of the UV photodetectors has been investigated. Random distribution of charged centers, which is associated with boundaries of mosaic structure domains being typical of III- nitrides, has been shown to result in a low Schottky barrier height, a high leakage current, and persistent photoconductivity in an undoped GaN. The introduction of low Si concentration minimized the effect as well as allows the Schottky barrier height to be obtained close to the difference between work functions of GaN and metal. The characteristics of Al_0,1Ga_0.9N Schottky barrier photodetectors have been given. MSM photodetectors and Schottky barrier photodetectors over spectral range 200-365 nm with characteristics close to those of the best analogs, in particular, leakage current density of about 10^-8A cm^-2, have been obtained using domestic GaN grown by MOCVD on sapphire substrates of (0001) orientation.

Citation Download Citation

N. M. Shmidt, W. V. Lundin, A. V. Sakharov, A. S. Usikov, E. E. Zavarin, A. V. Govorkov, A. Ya. Polyakov, and N. B. Smirnov "Ultraviolet photodetectors based on GaN and Al_xGa_1-xN epitaxial layers", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407713

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