Paper
21 July 2000 Design of EUVL camera with large numerical aperture
Author Affiliations +
Abstract
A design of four-mirror imaging optics is presented for the wavelength of 13.5 nm. The numerical aperture (NA) is 0.15. The reduction ratio is 5:1. The exposure area on wafer is 0.5 mm (width) X 25 mm (chord length). The designed resolution is 50 nm with MTF approximately equals 60%. The distortion is less than 0.01% and the astigmatism is near zero at the designed ring field.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yanqiu Li, Takeo Watanabe, and Hiroo Kinoshita "Design of EUVL camera with large numerical aperture", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390115
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KEYWORDS
Extreme ultraviolet lithography

Mirrors

Distortion

Wafer-level optics

Optical design

Cameras

Modulation transfer functions

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