IPL stencil mask distortions: experimental and theoretical analysis

Albrecht Ehrmann; Thomas Struck; Ernst Haugeneder; Hans Loeschner; Joerg Butschke; Florian Letzkus; Mathias Irmscher; Reinhard Springer

doi:10.1117/12.390075

21 July 2000 IPL stencil mask distortions: experimental and theoretical analysis

Albrecht Ehrmann, Thomas Struck, Ernst Haugeneder, Hans Loeschner, Joerg Butschke, Florian Letzkus, Mathias Irmscher, Reinhard Springer

Author Affiliations +

Proceedings Volume 3997, Emerging Lithographic Technologies IV; (2000) https://doi.org/10.1117/12.390075
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Ion Projection Lithography (IPL) requires stencil masks. These masks are manufactured in a SOI wafer flow process. This means that e-beam patterning and the pattern transfer in silicon is done on the bulk mask-wafer blank before the membrane is formed. The last steps are deposition of a protective carbonic layer and removal of carbon from the stencil openings by etching. The internal stress control of the finally remaining silicon and carbon layers is decisive for the pattern placement accuracy of the stencil mask. The surface geometry and pattern placement are measured with a LEICA LMS IPRO system at different process steps. The initial bow and warp of the SOI mask-wafer blank is measured. Then, the pattern placement is measured after e-beam writing. After membrane formation the samples are measured a third time followed by a final measurement after carbon layer deposition and etch. These results are to be compared with FE (Fenite Elements) modeling calculations. Compared to previous investigations the effect of wafer warp will be included. Furthermore, LMS IPRO measurements will be done with improved tool accuracy on stencil mask membranes as achieved recently. Thus, the claimed functional dependence between stress and pattern distortion is to be verified experimentally.

Citation Download Citation

Albrecht Ehrmann, Thomas Struck, Ernst Haugeneder, Hans Loeschner, Joerg Butschke, Florian Letzkus, Mathias Irmscher, and Reinhard Springer "IPL stencil mask distortions: experimental and theoretical analysis", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390075

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