Lithographic performance and optimization of chemically amplified single-layer resists for EUV lithography

Takeo Watanabe; Hiroo Kinoshita; Atsushi Miyafuji; Shigeo Irie; Shigeru Shirayone; Shigeyasu Mori; Ei Yano; Hideo Hada; Katsumi Ohmori; Hiroshi Komano

doi:10.1117/12.390100

21 July 2000 Lithographic performance and optimization of chemically amplified single-layer resists for EUV lithography

Takeo Watanabe, Hiroo Kinoshita, Atsushi Miyafuji, Shigeo Irie, Shigeru Shirayone, Shigeyasu Mori, Ei Yano, Hideo Hada, Katsumi Ohmori, Hiroshi Komano

Author Affiliations +

Proceedings Volume 3997, Emerging Lithographic Technologies IV; (2000) https://doi.org/10.1117/12.390100
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The single layer chemically amplified resists are investigated for the extreme ultra-violet lithography. From the results of the sensitivity curve, the positive-tone resist of DP603 and the negative-tone resist of SAL601 have high sensitivities and high gamma values to the EUV exposure wavelength. Furthermore, by the optimization of both the dosage and the wafer focusing position, we succeed in replicating 0.056-micrometer-resist- pattern width on the exposure-field size of 10 mm X 1 mm on an 8-inches-diameter wafer. We confirm the resolution capability of the three-aspherical mirror imaging system that has been developed by the Himeji Institute of Technology.

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Takeo Watanabe, Hiroo Kinoshita, Atsushi Miyafuji, Shigeo Irie, Shigeru Shirayone, Shigeyasu Mori, Ei Yano, Hideo Hada, Katsumi Ohmori, and Hiroshi Komano "Lithographic performance and optimization of chemically amplified single-layer resists for EUV lithography", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390100

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