Calculation of Misfit Dislocations and Dangling Bond Densities in Abrupt Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te Heterojunctions

Richard B. Schoolar

doi:10.1117/12.935733

30 November 1983 Calculation of Misfit Dislocations and Dangling Bond Densities in Abrupt Hg_1-xCd_xTe Heterojunctions

Richard B. Schoolar

Proceedings Volume 0409, Technical Issues in Infrared Detectors and Arrays; (1983) https://doi.org/10.1117/12.935733
Event: 1983 Technical Symposium East, 1983, Arlington, United States

Abstract

Based on the classical theory of epitaxial crystal growth, the misfit dislocations and dangling bond densities of abrupt (111) Hg _l- _xCd_xTe heterojunctions have been calculated. It is assumed that the misfit between layers with compositions xi and x2 is accommodated by edge dislocations lying along the <111> directions. This is in agreement with recent experiments on the growth of Hg_l-xCd_xTe epitaxial layers. For the case where (x₂ _-x1) >0.1 the dangling bond density is on the order of 10¹¹cm^-2. Such large dangling bond densities may produce high interface recombination velocities or band-bending at the interface.

Citation Download Citation

Richard B. Schoolar "Calculation of Misfit Dislocations and Dangling Bond Densities in Abrupt Hg_1-xCd_xTe Heterojunctions", Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); https://doi.org/10.1117/12.935733

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