Optimization of the MBE growth of Hg1-xCdxTe for advanced infrared applications

Honnavalli R. Vydyanath; Priyalal S. Wijewarnasuriya; Sivalingam Sivananthan; Vaidya Nathan

doi:10.1117/12.317625

22 July 1998 Optimization of the MBE growth of Hg_1-xCdxTe for advanced infrared applications

Honnavalli R. Vydyanath, Priyalal S. Wijewarnasuriya, Sivalingam Sivananthan, Vaidya Nathan

Proceedings Volume 3379, Infrared Detectors and Focal Plane Arrays V; (1998) https://doi.org/10.1117/12.317625
Event: Aerospace/Defense Sensing and Controls, 1998, Orlando, FL, United States

Abstract

Hg_1-xCd_xTe films with x values varying from 0.2 to 0.23 have been grown and characterized. N-type carrier concentrations in the range of 1 X 10¹⁵ cm^-3 to 3 X 10¹⁵ cm^-3 have been obtained. Hall effect measurements before and after anneals at 250 degrees Celsius have led to the evaluation of the Hg vacancy concentration in the samples. Dislocation density less than 10⁵ cm^-2 and X-ray rocking curve width less than 25 arc- secs measured in some of the films attests to the excellent crystallinity of the material.

Citation Download Citation

Honnavalli R. Vydyanath, Priyalal S. Wijewarnasuriya, Sivalingam Sivananthan, and Vaidya Nathan "Optimization of the MBE growth of Hg_1-xCdxTe for advanced infrared applications", Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); https://doi.org/10.1117/12.317625

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