Calibration requirements for identifying and sizing wafer defects by scanner measurements

John C. Stover; Craig A. Scheer

doi:10.1117/12.405832

2 November 2000 Calibration requirements for identifying and sizing wafer defects by scanner measurements

John C. Stover, Craig A. Scheer

Proceedings Volume 4099, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries; (2000) https://doi.org/10.1117/12.405832
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

New particle scanner capabilities are needed to meet requirements for the next generation of devices in the semiconductor industry. Among these, defect identification and sizing are very important. This paper shows the key role of accurate scanner calibration to achieving these advances in scanner capability. An example, using modeled results from a hypothetical scanner geometry, analyzes the ability to discriminate surface pits from silicon particles for differing levels uncertainty in the PSL calibration spheres.

Citation Download Citation

John C. Stover and Craig A. Scheer "Calibration requirements for identifying and sizing wafer defects by scanner measurements", Proc. SPIE 4099, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries, (2 November 2000); https://doi.org/10.1117/12.405832

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