Paper
22 August 2000 Status of the development of a 128x128 microshutter array
Author Affiliations +
Proceedings Volume 4178, MOEMS and Miniaturized Systems; (2000) https://doi.org/10.1117/12.396500
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States
Abstract
We are developing a lithography process for a 2D array of microshutters which can be used as a high efficiency, high contrast field selection device for a multi-objects spectrometer for the Next Generation Space Telescope. The device is a close- packed array of shutters with an individual shutter size of 100 micrometers square and area filling factor of about 80 percent, produced in a 100 micrometers thick silicon wafer. Our current array size is 128 by 128. Ech shutter made of silicon nitride with an appropriate optical coating, pivots on a torsion flexure along one edge. A CMOS circuit embedded in the frame around the shutters allows individual selection. An original double-shutter mechanism is employed for actuation. Processing includes anisotropic back etching for wafer thinning, a DRIE back etch through the silicon to the mechanical active nitride membrane and a RIE to produce the shutters out of the nitride membrane. Our layout is based on a detailed mechanical analysis for which we determined crucial material parameters experimentally.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Samuel Harvey Moseley Jr., Rainer K. Fettig, Alexander S. Kutyrev, Mary J. Li, David Brent Mott, and Bruce E. Woodgate "Status of the development of a 128x128 microshutter array", Proc. SPIE 4178, MOEMS and Miniaturized Systems, (22 August 2000); https://doi.org/10.1117/12.396500
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Cited by 9 scholarly publications.
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KEYWORDS
Camera shutters

Silicon

Semiconducting wafers

Etching

Ions

Deep reactive ion etching

Reactive ion etching

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