Feasibility and applicability of integrated metrology using spectroscopic ellipsometry in a cluster tool

Pierre Boher; Christopher Pickering; Alexandre Tarnowka; Jean-Philippe Piel; Patrick Evrard; Jean-Louis P. Stehle

doi:10.1117/12.410067

23 August 2000 Feasibility and applicability of integrated metrology using spectroscopic ellipsometry in a cluster tool

Pierre Boher, Christopher Pickering, Alexandre Tarnowka, Jean-Philippe Piel, Patrick Evrard, Jean-Louis P. Stehle

Proceedings Volume 4182, Process Control and Diagnostics; (2000) https://doi.org/10.1117/12.410067
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

This paper reports progress on the integration of spectroscopic ellipsometry (SE) in the cool-down chamber of an applied materials Epi Centura Cluster System. It has been shown that new spectroscopic ellipsometer can measure wafers through a window with non-normal incidence. Correction procedures have been established and tested with measurements on standard oxide samples. Strained SiGe layers can be characterized in terms of Ge content and layer thickness indicating the feasibility of the integrate metrology technique. Further measurements are in progress with the system installed in a fully operating cluster tool. Future work will focus on improving the throughput by, for instance, rapid spectral data acquisition and application of novel algorithms to extract layer parameters during the automatic cool-down sequence.

Citation Download Citation

Pierre Boher, Christopher Pickering, Alexandre Tarnowka, Jean-Philippe Piel, Patrick Evrard, and Jean-Louis P. Stehle "Feasibility and applicability of integrated metrology using spectroscopic ellipsometry in a cluster tool", Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); https://doi.org/10.1117/12.410067

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