High-power coherent GaAs-based monolithic diode lasers

Dan Botez

doi:10.1117/12.429785

6 June 2001 High-power coherent GaAs-based monolithic diode lasers

Dan Botez

Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429785
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

To obtain high coherent powers from large aperture devices in stable beam patterns one needs to use active photonic- lattice (APL) structures of large built-in index step. Resonant phase-locked arrays of antiguides have provided 1.6 W CW coherent power from 200 micrometers -wide apertures. ARROW- type devices, simpler APL structures, hold the potential for emitting 1 W single-mode power reliably in stable beam patterns.

Citation Download Citation

Dan Botez "High-power coherent GaAs-based monolithic diode lasers", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); https://doi.org/10.1117/12.429785

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