High-power coherent GaAs-based monolithic semiconductor lasers

Dan Botez

doi:10.1117/12.447763

8 November 2001 High-power coherent GaAs-based monolithic semiconductor lasers

Dan Botez

Proceedings Volume 4533, Semiconductor Lasers for Lightwave Communication Systems; (2001) https://doi.org/10.1117/12.447763
Event: ITCom 2001: International Symposium on the Convergence of IT and Communications, 2001, Denver, CO, United States

Abstract

Stable-beam operation to high coherent powers from large aperture devices can only be obtained from active-photonic- lattice (APL) structures of large built-in index step. Resonant phase-locked arrays of antiguides, so called ROW array, have provided 1.6W CW coherent power from 200micrometers - wide apertures. Two-dimensional surface-emitting APLs combining ROW arrays and DFB-DBR structures with central (pi) phase-shift are capable of providing coherent powers in the multi-watt range. ARROW-type devices, simpler APL structures, hold the potential for emitting 1W single-mode CW power reliability in stable beam patterns.

Citation Download Citation

Dan Botez "High-power coherent GaAs-based monolithic semiconductor lasers", Proc. SPIE 4533, Semiconductor Lasers for Lightwave Communication Systems, (8 November 2001); https://doi.org/10.1117/12.447763

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