Paper
22 August 2001 Sampling strategy and model to measure and compensate overlay errors
Chen-Fu Chien, Kuo-Hao Chang, Chih-Ping Chen
Author Affiliations +
Abstract
Overlay is one of the key designed rules for producing VLSI devices. In order to have a better resolution and alignment accuracy in lithography process, it is important to model the overlay errors and then to compensate them into tolerances. This study aimed to develop a new model that bridges the gap between the existing theoretical models and the data obtained in real settings and to discuss the overlay sampling strategies with empirical data in a wafer fab. In addition, we used simulation to examine the relations between the various factors and the caused overlay errors. This paper concluded with discussions on further research.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chen-Fu Chien, Kuo-Hao Chang, and Chih-Ping Chen "Sampling strategy and model to measure and compensate overlay errors", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436748
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CITATIONS
Cited by 3 scholarly publications and 1 patent.
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KEYWORDS
Data modeling

Overlay metrology

Semiconducting wafers

Distortion

Very large scale integration

Bridges

Optical alignment

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