Annealing of GaSb single crystals in ionized hydrogen atmosphere

Bedrich Stepanek; Vera Sestakova; Jaroslav Sestak

doi:10.1117/12.435865

10 August 2001 Annealing of GaSb single crystals in ionized hydrogen atmosphere

Bedrich Stepanek, Vera Sestakova, Jaroslav Sestak

Proceedings Volume 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals; (2001) https://doi.org/10.1117/12.435865
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

GaSb undoped wafer were annealed in flowing ionized hydrogen atmosphere at temperature range between 100-350 degrees C for 1-50 hours. The free carrier concentration and resistivity were measured. It was found out that the wafers being treated at a temperature of 150 degrees C for 24 hours reached the resistivity of about 10²-10³ (Omega) cm and the free carrier concentration was lower than 1 by 10¹⁵ cm^-3. However, the thickness of the passivated layer was only 0.4-0.6 micrometers .

Citation Download Citation

Bedrich Stepanek, Vera Sestakova, and Jaroslav Sestak "Annealing of GaSb single crystals in ionized hydrogen atmosphere", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); https://doi.org/10.1117/12.435865

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available