Impulse response of the metal-semiconductor-metal photodetector with heterobarrier

Stanislav V. Averine; Yuen Chuen Chan; Yee Loy Lam; Oleg Bondarenko; Remy Sachot

doi:10.1117/12.427076

8 May 2001 Impulse response of the metal-semiconductor-metal photodetector with heterobarrier

Stanislav V. Averine, Yuen Chuen Chan, Yee Loy Lam, Oleg Bondarenko, Remy Sachot

Proceedings Volume 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001); (2001) https://doi.org/10.1117/12.427076
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '01), 2001, Yokohama, Japan

Abstract

Impulse response of a metal-semiconductor-metal photodiode to a short laser pulse is computed and discussed in terms of the distribution of photogenerated carriers and electric fields. We show that the heterobarrier structure in the light absorbing region greatly enhances the response speed of InP/GaInAs MSM detector.

Citation Download Citation

Stanislav V. Averine, Yuen Chuen Chan, Yee Loy Lam, Oleg Bondarenko, and Remy Sachot "Impulse response of the metal-semiconductor-metal photodetector with heterobarrier", Proc. SPIE 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001), (8 May 2001); https://doi.org/10.1117/12.427076

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