Using scanning probe microscopy and nanomoter surface profiler of DEDTAK for determination of thermal stress in quasi-monolithic integration technology (QMIT)

Mojtaba Joodaki; Teoman Senyildiz; Guenter Kompa; Rainer Kassing; Hartmut Hillmer

doi:10.1117/12.452550

27 December 2001 Using scanning probe microscopy and nanomoter surface profiler of DEKTAK for determination of thermal stress in quasi-monolithic integration technology (QMIT)

Mojtaba Joodaki, Teoman Senyildiz, Guenter Kompa, Rainer Kassing, Hartmut Hillmer

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Proceedings Volume 4468, Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing; (2001) https://doi.org/10.1117/12.452550
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

In this paper, application of scanning probe microscopy (SPM) and nanometer surface profiler of DEKTAK for determination of thermal stress in standard structure of QMIT is described. A three dimension finite element (3DFE) thermal stress simulator, a scanning probe microscopy measurements and nanometer surface profiler accompanied with a Peltier element (PE) have been used to determine the thermal stress distribution in the standard structure of QMIT. In this method by measuring and mapping the surface profile of Si-wafer around the embedded devices using SPM and DEKTAK the induced thermal stress is determined. Effects of different parameters such as baking temperature, power dissipation of the embedded GaAs-FET, geometry and elastic properties of thermal conductive epoxy have been described in details. Remarkable agreement between calculated and measured displacements created by thermal stress was found.

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Mojtaba Joodaki, Teoman Senyildiz, Guenter Kompa, Rainer Kassing, and Hartmut Hillmer "Using scanning probe microscopy and nanomoter surface profiler of DEKTAK for determination of thermal stress in quasi-monolithic integration technology (QMIT)", Proc. SPIE 4468, Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing, (27 December 2001); https://doi.org/10.1117/12.452550

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KEYWORDS

Scanning probe microscopy

Epoxies

Silicon

Profilometers

Gallium arsenide

Temperature metrology

Field effect transistors

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