Paper
23 July 2014 Comparison of cryogenic W band low noise amplifier based on different III-V HEMT foundry process and technologies
L. Valenziano, M. Zannoni, S. Mariotti, A. Cremonini, A. De Rosa, S. Banfi, A. Baù, M. Gervasi, E. Limiti, A. Passerini, F. Schiavone
Author Affiliations +
Abstract
We present the results of a development activity for cryogenic Low Noise Amplifiers based on HEMT technology for ground based and space-borne application. We have developed and realized two LNA design in W band, based on m-HEMT technology. MMIC chips have been manufactured by European laboratories and companies and assembled in test modules by our team. We compare performances with other technologies and manufacturers. LNA RF properties (noise figures, S-parameters) have been measured at room and cryogenic temperature and test results are reported in this paper. Performance are compared with those of state-of-the-art devices, as available in the literature. Strengths and improvements of this project are also discussed.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Valenziano, M. Zannoni, S. Mariotti, A. Cremonini, A. De Rosa, S. Banfi, A. Baù, M. Gervasi, E. Limiti, A. Passerini, and F. Schiavone "Comparison of cryogenic W band low noise amplifier based on different III-V HEMT foundry process and technologies", Proc. SPIE 9153, Millimeter, Submillimeter, and Far-Infrared Detectors and Instrumentation for Astronomy VII, 91532N (23 July 2014); https://doi.org/10.1117/12.2057091
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KEYWORDS
Epoxies

Cryogenics

Temperature metrology

Field effect transistors

Tellurium

Amplifiers

Gallium arsenide

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