II-VI compounds wide-band barrier detectors of He-Ne laser

V. P. Makhniy; V. E. Baranjuk; Mikhail M. Slyotov; O. V. Stets

doi:10.1117/12.455211

5 February 2002 II-VI compounds wide-band barrier detectors of He-Ne laser

V. P. Makhniy, V. E. Baranjuk, Mikhail M. Slyotov, O. V. Stets

Proceedings Volume 4607, Selected Papers from Fifth International Conference on Correlation Optics; (2002) https://doi.org/10.1117/12.455211
Event: Fifth International Conference on Correlation Optics, 2001, Chernivsti, Ukraine

Abstract

The basic parameters and characteristics of surface barrier and heterojunction photodiodes that contain a layer of cadmium telluride with an isovalent impurity are examined. The role of the isovalent impurity in the magnification of the temperature and radiant resistance of the detectors is analyzed.

Citation Download Citation

V. P. Makhniy, V. E. Baranjuk, Mikhail M. Slyotov, and O. V. Stets "II-VI compounds wide-band barrier detectors of He-Ne laser", Proc. SPIE 4607, Selected Papers from Fifth International Conference on Correlation Optics, (5 February 2002); https://doi.org/10.1117/12.455211

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