Overlay accuracy in 0.18-micron copper dual-damascene process

Bernd Schulz; Harry J. Levinson; Rolf Seltmann; Joel L. Seligson; Pavel Izikson; Anat Ronen

doi:10.1117/12.473477

16 July 2002 Overlay accuracy in 0.18-μm copper dual-damascene process

Bernd Schulz, Harry J. Levinson, Rolf Seltmann, Joel L. Seligson, Pavel Izikson, Anat Ronen

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473477
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

As overlay budgets shrink with design rules, the importance of overlay metrology accuracy increases. We have investigated the overlay accuracy of a 0.18mm design rule Copper-Dual-Damascene process by comparing the overlay metrology results at the After Develop (DI) and After Etch (FI) stages. The comparisons were done on five process layers on production wafers, while ensuring that the DI and FI measurements were always done on the same wafer. In addition, we measured the in-die overlay on one of the process layers (Poly Gate) using a CD-SEM, and compared the results to the optical overlay metrology in the scribe-line. We found that a serious limitation to in-die overlay calibration was the lack of suitable structures measurable by CD-SEM. We will present quantitative results from our comparisons, as well as a recommendation for incorporating CD-SEM-measurable structures in the chip area in future reticle designs.

Citation Download Citation

Bernd Schulz, Harry J. Levinson, Rolf Seltmann, Joel L. Seligson, Pavel Izikson, and Anat Ronen "Overlay accuracy in 0.18-μm copper dual-damascene process", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473477

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