Progress in 157-nm resist performance and potential

Patrick Wong; Stephan Sinkwitz; Steven G. Hansen; Anne-Marie Goethals; Will Conley

doi:10.1117/12.474250

24 July 2002 Progress in 157-nm resist performance and potential

Patrick Wong, Stephan Sinkwitz, Steven G. Hansen, Anne-Marie Goethals, Will Conley

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474250
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The data presented is from resist materials exposed on the 157-nm Microstepper at SEMATECH. Photoresist suppliers provided the first samples of materials in early 2001. During the remainder of 2001, several improved formulations were supplied and tested. Over the last year, the lithographic performance of thick chemistries has improved, but exposure latitude is still inferior compared to Ultra Thin Resist (UTR) samples. Recently, more transparent samples have appeared demonstrating performance that is close to that of UTRs in terms of processing latitudes. Although sub 100-nm imaging has been shown, limited 70-nm performance with the alternating PSM indicates that significant progress still has to be made before the resists are capable of the targeted 70-nm node with a high NA tool.

Citation Download Citation

Patrick Wong, Stephan Sinkwitz, Steven G. Hansen, Anne-Marie Goethals, and Will Conley "Progress in 157-nm resist performance and potential", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474250

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