Paper
13 September 2002 Fundamentals and advantages in ultrafast microstructuring of transparent materials
David Ashkenasi, Arkadi Rosenfeld, Razvan Stoian, Nadezhda M. Bulgakova, Eleanor E. B. Campbell, Ingolf V. Hertel
Author Affiliations +
Abstract
Time resolved studies using femtosecond laser pulses at 800 nm illuminate the distinctions in the dynamics of ultrafast processing of dielectrics compared to semi-conductors and metals. Dielectric materials are strongly charged at the surface on the sub-ps time scale and undergo an impulsive Coulomb explosion prior to thermal ablation. Provided the laser pulse width remains in the ps or sub-ps time domain this effect can be exploited for processing. Otherwise, the high localization of energy accompanied by ultrafast laser micro structuring is of great advantage also for high quality processing of thin metallic or semi-conductive layers, where the surface charge is effectively quenched.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Ashkenasi, Arkadi Rosenfeld, Razvan Stoian, Nadezhda M. Bulgakova, Eleanor E. B. Campbell, and Ingolf V. Hertel "Fundamentals and advantages in ultrafast microstructuring of transparent materials", Proc. SPIE 4760, High-Power Laser Ablation IV, (13 September 2002); https://doi.org/10.1117/12.482033
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Cited by 5 scholarly publications.
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KEYWORDS
Laser ablation

Dielectrics

Ions

Pulsed laser operation

Metals

Aluminum

Laser processing

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