Thermoelectric films prepared by pulsed laser deposition

A. Dauscher; B. Lenoir; O. Boffoue; A. Jacquot

doi:10.1117/12.478665

9 August 2002 Thermoelectric films prepared by pulsed laser deposition

A. Dauscher, B. Lenoir, O. Boffoue, A. Jacquot

Proceedings Volume 4762, ALT'01 International Conference on Advanced Laser Technologies; (2002) https://doi.org/10.1117/12.478665
Event: International Conference on: Advanced Laser Technologies (ALT'01), 2001, Constanta, Romania

Abstract

Thermoelectric thin films have been prepared by pulsed laser deposition (PLD) from a Nd:YAG laser. Materials include bismuth (Bi), bismuth telluride (Bi₂Te₃), and lead telluride (PbTe). The influence of various deposition parameters (substrate temperature, substrate nature, ...) On the achievement of high quality stoichiometric films is discussed. Results of transport property measurements (electrical resistivity, thermoelectric power, Hall coefficient) are attempted to be correlated to the film microstructure. Some particular features relevant to each materials (problems of non-congruent transfer of stoichiometry, particular thickness profiles, ...) are highlighted.

Citation Download Citation

A. Dauscher, B. Lenoir, O. Boffoue, and A. Jacquot "Thermoelectric films prepared by pulsed laser deposition", Proc. SPIE 4762, ALT'01 International Conference on Advanced Laser Technologies, (9 August 2002); https://doi.org/10.1117/12.478665

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