Measurement of lithographic overlay by light-scattering ellipsometry

Thomas A. Germer

doi:10.1117/12.453789

22 October 2002 Measurement of lithographic overlay by light-scattering ellipsometry

Thomas A. Germer

Proceedings Volume 4780, Surface Scattering and Diffraction for Advanced Metrology II; (2002) https://doi.org/10.1117/12.453789
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

We demonstrate a measurement of lithographic overlay using light scattering ellipsometry. In the limit of small amplitude surface topography, the polarization of light scattered by the two interfaces of a dielectric film can be decomposed into the roughness of each interface and the complex degree of phase correlation. For two identical but offset roughness functions, the degree of phase correlation will show oscillations, whose frequency in the spatial frequency domain will be given by the overlay distance Δx. The method is tested us-ing a shallow pseudorandom binary 1-D grating, photolithographically produced on a silicon wafer and again on a spin-on glass layer deposited onto the wafer.

Citation Download Citation

Thomas A. Germer "Measurement of lithographic overlay by light-scattering ellipsometry", Proc. SPIE 4780, Surface Scattering and Diffraction for Advanced Metrology II, (22 October 2002); https://doi.org/10.1117/12.453789

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