OLEDs with enhanced high-temperature operational stability

Zoran D. Popovic; George Vamvounis; Hany Aziz; Nan-Xing Hu

doi:10.1117/12.454858

3 March 2003 OLEDs with enhanced high temperature operational stability

Zoran D. Popovic, George Vamvounis, Hany Aziz, Nan-Xing Hu

Proceedings Volume 4800, Organic Light-Emitting Materials and Devices VI; (2003) https://doi.org/10.1117/12.454858
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Temperature dependence of electroluminescence degradation is studied in organic light emitting devices containing an emitting layer composed of a mixture of different hole transport molecules and tris(8-hydroxyquinoline)aluminum (ALQ₃) electron transport and emitter molecule. The emitting layer is sandwiched between hole and electron transport layers. Devices containing the hole transport molecule N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB), doped with quinacridone (DMQ) green emitter showed remarkable temperature stability. For these devices, a half-life of about 78,500 hours, 18,700 hours, and 8,600 hours can be projected for operating temperatures of 22°C, 70°C and 100°C, respectively, at an initial device luminance of 100 cd/m². Activation energies for device degradation were determined for devices with different hole transport molecules and it was found that devices with higher activation energy show better high temperature stability. These results are consistent with the recently proposed degradation mechanism based on the unstable cationic AlQ₃ species.

Citation Download Citation

Zoran D. Popovic, George Vamvounis, Hany Aziz, and Nan-Xing Hu "OLEDs with enhanced high temperature operational stability", Proc. SPIE 4800, Organic Light-Emitting Materials and Devices VI, (3 March 2003); https://doi.org/10.1117/12.454858

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