Refractive index of SiO2 thin films deposited by pulsed-laser deposition with silicone targets for fabricating waveguide devices

Masayuki Okoshi; Masaaki Kuramatsu; Hiromitsu Takao; Narumi Inoue

doi:10.1117/12.486575

19 February 2003 Refractive index of SiO₂ thin films deposited by pulsed laser deposition with silicone targets for fabricating waveguide devices

Masayuki Okoshi, Masaaki Kuramatsu, Hiromitsu Takao, Narumi Inoue

Author Affiliations +

Proceedings Volume 4830, Third International Symposium on Laser Precision Microfabrication; (2003) https://doi.org/10.1117/12.486575
Event: LAMP 2002: International Congress on Laser Advanced Materials Processing, 2002, Osaka, Japan

Abstract

We deposited SiO₂ films with different refractive indices by pulsed laser deposition with silicone targets. The deposition rate could control the refractive index of the films. The refractive index of the film deposited at 0.05 nm/pulse is greater than that of the film at 0.1 nm/pulse. The origin of the refractive index changes was to be film porosity changes, which was observed by surface profile meter. The deposited films were free of impurities such as OH and carbon. Thus, a 0.4- μm-thick SiO₂ cladding film deposited at 0.1 nm/pulse was firstly formed on the whole surface of Si wafer, and then a 1- μm-thick SiO₂ core film at 0.05 nm/pulse was fabricated in a line on the sample. Again, the sample was coated with a 0.1- μm-thick film at 0.1 nm/pulse. The sample functioned as an optical waveguide for a 633-nm line of He-Ne laser.

Citation Download Citation

Masayuki Okoshi, Masaaki Kuramatsu, Hiromitsu Takao, and Narumi Inoue "Refractive index of SiO₂ thin films deposited by pulsed laser deposition with silicone targets for fabricating waveguide devices", Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); https://doi.org/10.1117/12.486575

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