Mid-infrared GeTe4 waveguides on silicon with a ZnSe isolation layer

Vinita Mittal; Chris Craig; Neil P. Sessions; Daniel W. Hewak; James S. Wilkinson; Ganapathy S. Murugan

doi:10.1117/12.2196663

28 August 2015 Mid-infrared GeTe₄ waveguides on silicon with a ZnSe isolation layer

Vinita Mittal, Chris Craig, Neil P. Sessions, Daniel W. Hewak, James S. Wilkinson, Ganapathy S. Murugan

Proceedings Volume 9609, Infrared Sensors, Devices, and Applications V; 96090P (2015) https://doi.org/10.1117/12.2196663
Event: SPIE Optical Engineering + Applications, 2015, San Diego, California, United States

Abstract

GeTe₄ waveguides were designed and fabricated on silicon substrates with a ZnSe isolation layer. GeTe₄ has a refractive index of 3.25 at a wavelength of 9 μm and a lower refractive index isolation layer is needed to realise waveguides on silicon. Numerical modelling was carried out to calculate the thickness of the isolation layer (ZnSe, refractive index ~2.4) required to achieve low loss waveguides. For a loss between 0.1 and 1.0 dB/cm it was found that a ~ 4 μm thick ZnSe film is required at a wavelength of 9 μm. ZnSe thin films were deposited on silicon, GeTe4 waveguides were fabricated by lift-off technique and were characterised for mid-infrared waveguiding.

Citation Download Citation

Vinita Mittal, Chris Craig, Neil P. Sessions, Daniel W. Hewak, James S. Wilkinson, and Ganapathy S. Murugan "Mid-infrared GeTe₄ waveguides on silicon with a ZnSe isolation layer", Proc. SPIE 9609, Infrared Sensors, Devices, and Applications V, 96090P (28 August 2015); https://doi.org/10.1117/12.2196663

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