Paper
29 August 2002 Active photonic lattices: lasers for watt-range coherent-power generation
Dan Botez
Author Affiliations +
Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.480988
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
Abstract
Active photonic lattices (APLs) of large index step have been used, as early as 1988, for effective lateral-mode control in large-aperture (100 microns) high-power coherent devices. Photonic-bandpass (PBP) structures relying on long-range resonant leaky-wave coupling, so called ROW arrays, have allowed stable, near-diffraction-limited beam operation to powers as high as 1.6W CW and 10W peak pulsed. Photonic-bandgap (PBG) structures with a built-in lattice defect, so called ARROW lasers, have provided up to 0.5W peak-pulsed stable, single-mode power and hold the potential for 1W CW reliable single-mode operation from apertures ~10 microns wide. The solution for high-efficiency surface emission, from 2nd-order DFB/DBR lasers, in an orthonormal, single-lobe beam pattern was found in 2000. Recently, single-lobe and single-mode operation in a diffraction-limited beam orthonormal to the chip surface was demonstrated from 1.5mm-long DFB/DBR ridge-guide lasers. That opens the way for the realization of 2-D surface-emitting, 2nd-order APLs for the stable generation of watts of CW single-lobe, single-mode power from large 2-D apertures, as well as scalability of such devices at the wafer level.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dan Botez "Active photonic lattices: lasers for watt-range coherent-power generation", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.480988
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KEYWORDS
Neodymium

Semiconductor lasers

Continuous wave operation

High power lasers

Semiconducting wafers

Control systems

Gallium arsenide

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