Repetition rate dependence of two-photon absorption and self-trapped exciton luminescence in CaF2 at 193 nm

Christian Goerling; Uwe Leinhos; Klaus R. Mann

doi:10.1117/12.472376

30 May 2003 Repetition rate dependence of two-photon absorption and self-trapped exciton luminescence in CaF₂ at 193 nm

Christian Goerling, Uwe Leinhos, Klaus R. Mann

Proceedings Volume 4932, Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization; (2003) https://doi.org/10.1117/12.472376
Event: XXXIV Annual Symposium on Optical Materials for High Power Lasers: Boulder Damage Symposium, 2002, Boulder, CO, United States

Abstract

Repetition rate dependent measurements of nonlinear absorptance and self-trapped exciton luminescence (π-luminescence) of high-purity CaF₂ crystals irradiated at 193 nm were performed in the range between 25 Hz and 300 Hz. The CaF₂ samples showed different two-photon absorption coefficients ("effective" two-photon absorption coefficients β_eff), which are attributed to different impurity or defect concentrations inside the crystals. For samples with β_eff < 4 x 10^-9 cm/W no dependence on repetition rate could be observed, while samples with higher β_eff (⩾ 5 x 10^-9 cm/W) reveal a strong nonlinear increase of β_eff for increasing repetition rates. In contrast, the intensity of self-trapped exciton luminescence was nearly the same for all samples and repetition rates. A simple model for this behavior was developed, including the formation of long-living transient absorbing states, which contribute additionally to the two-photon absorption.

Citation Download Citation

Christian Goerling, Uwe Leinhos, and Klaus R. Mann "Repetition rate dependence of two-photon absorption and self-trapped exciton luminescence in CaF₂ at 193 nm", Proc. SPIE 4932, Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization, (30 May 2003); https://doi.org/10.1117/12.472376

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