Silicon sensor integration to form smart sensors

Leon Gourdeas; Daniel A. James; David Victor Thiel; Le Lian See

doi:10.1117/12.469077

14 November 2002 Silicon sensor integration to form smart sensors

Leon Gourdeas, Daniel A. James, David Victor Thiel, Le Lian See

Proceedings Volume 4935, Smart Structures, Devices, and Systems; (2002) https://doi.org/10.1117/12.469077
Event: SPIE's International Symposium on Smart Materials, Nano-, and Micro- Smart Systems, 2002, Melbourne, Australia

Abstract

The use of silicon-based sensors requires the addition of external support electronics to allow for compatibility with external logging and display instruments. The development of a smart sensor technology, where the support electronics are incorporated into the sensor allows for a simpler interface. To achieve this integration techniques are required for the connection of substrate sensors with drive and support circuitry (operational amplifiers and CMOS circuitry), for effective encapsulation into a single packaged device. In this paper a literature review of basic peripheral and internal interconnect techniques is presented. Three techniques for interconnects were experimentally investigated (wraparound, thermomigration and etched micro via’s) using in-house fabrication equipment and the results presented and discussed. An integrated "smart" light sensor was constructed by forming a schotkey diode on n-type silicon. The sensor was integrated with a commercially available LM324 quad operational amplifier die and etched micro via`s were used to connect between the electronics on one side and the silicon sensor on the other side so forming a smart sensor. The light level sensor was calibrated and tested for suitability as a solar intensity monitor.

Citation Download Citation

Leon Gourdeas, Daniel A. James, David Victor Thiel, and Le Lian See "Silicon sensor integration to form smart sensors", Proc. SPIE 4935, Smart Structures, Devices, and Systems, (14 November 2002); https://doi.org/10.1117/12.469077

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