Paper
11 March 2003 Optimization of InGaAsP/InP buried heterostructure DFB lasers for 10-Gbit/s operation up to 100°C
Paul M. Charles, Michele Agresti, Gordon Burns, Graham M. Berry, D. Bertone, A. Davies, R. Y. Fang, P. Gotta, Constantine Kompocholis, Gloria Magnetti, J. Massa, Giancarlo Meneghini, Roberto Paoletti, Giammarco Rossi, A. Taylor, P. Valenti, Marina Meliga
Author Affiliations +
Abstract
The optimization of a 1300nm buried heterostructure(BH)InGaAsP/InP DFB laser for uncooled directly modulated 10Gbit/s operation is described. The development process as well as the key process parameters are discussed and results are presented on an optimized structure. Bandwidths in excess of 10GHz were measured at 90C chip base temperature. Clean open eye diagrams were recorded over the full temperature range, resulting in error free transmission over 40km. To our knowledge the results represent the current state of the art for uncooled BH DFB lasers operating at 1300nm.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul M. Charles, Michele Agresti, Gordon Burns, Graham M. Berry, D. Bertone, A. Davies, R. Y. Fang, P. Gotta, Constantine Kompocholis, Gloria Magnetti, J. Massa, Giancarlo Meneghini, Roberto Paoletti, Giammarco Rossi, A. Taylor, P. Valenti, and Marina Meliga "Optimization of InGaAsP/InP buried heterostructure DFB lasers for 10-Gbit/s operation up to 100°C", Proc. SPIE 4947, Laser Diodes, Optoelectronic Devices, and Heterogenous Integration, (11 March 2003); https://doi.org/10.1117/12.474862
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KEYWORDS
Capacitance

Temperature metrology

Etching

Modulation

Semiconducting wafers

Eye

Heterojunctions

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