MOCVD-grown InGaAsN quantum-well lasers

Luke J. Mawst; Nelson Tansu; Jeng-Ya Yeh

doi:10.1117/12.475793

3 July 2003 MOCVD-grown InGaAsN quantum-well lasers

Luke J. Mawst, Nelson Tansu, Jeng-Ya Yeh

Proceedings Volume 4995, Novel In-Plane Semiconductor Lasers II; (2003) https://doi.org/10.1117/12.475793
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

High performance strained-layer InGaAs (λ=1.2μm) and InGaAsN (λ=1.3μm) quantum-well lasers have been realized by MOCVD growth using Arsine and Dimethylhydrazine as the group V precursors. The use of GaAsP high bandgap barrier layers is shown to improve device performance over conventional GaAs barrier lasers. By comparison to conventional InP-based technology, InGaAsN lasers exhibit very low threshold current density at high temperature (390A/cm² at 80°C), using a single-quantum well design.

Citation Download Citation

Luke J. Mawst, Nelson Tansu, and Jeng-Ya Yeh "MOCVD-grown InGaAsN quantum-well lasers", Proc. SPIE 4995, Novel In-Plane Semiconductor Lasers II, (3 July 2003); https://doi.org/10.1117/12.475793

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