Mr. Luke J. Mawst Profile

Luke J. Mawst

Professor at Univ of Wisconsin-Madison

SPIE Involvement:

Conference Program Committee | Author

Publications (80)

Proceedings Article | 13 March 2024 Presentation

Room-temperature, directly modulated DFB-QCLs and resonant-cavity infrared detectors (RCIDs) for 5 Gb/s OOK free-space, mid-wave infrared atmospheric laser communication

R. Marsland, M. Turville-Heitz, J.-H. Ryu, C. Canedy, I. Vurgaftman, V. Jayaraman, T. Earles, S. Ruder, B. Knipfer, J. Meyer, D. Botez, L. Mawst

Proceedings Volume 12877, 128770F (2024) https://doi.org/10.1117/12.3001038

KEYWORDS: Mid-IR, Modulation, Laser communications, Infrared detectors, Quantum cascade lasers, Atmospheric sensing, Long wavelength infrared, Tunable filters, Signal attenuation, Data transmission

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Proceedings Article | 8 March 2024 Presentation + Paper

Demonstration of ultraviolet III-nitride laser diode with an asymmetric waveguide structure

Matthew Seitz, Jacob Boisvere, Bryan Melanson, Cheng Liu, Qinchen Lin, Guangying Wang, Matthew Dwyer, Tom Earles, Nelson Tansu, Luke Mawst, Shubhra Pasayat, Chirag Gupta, Jing Zhang

Proceedings Volume 12886, 1288608 (2024) https://doi.org/10.1117/12.3001810

KEYWORDS: Waveguides, Gallium nitride, Semiconductor lasers, Fabrication

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Proceedings Article | 17 March 2023 Presentation

Monolithic coherent power scaling of mid-ir quantum cascade lasers

Luke Mawst, Jae Ha Ryu, Jeremy Kirch, Morgan Turville-Heitz, Shuiq Zhang, Dan Botez, Benjamin Knipfer, Robert Marsland, Steve Jacobs, Axel Strömberg, Yan-Ting Sun, Sebastian Lourdudoss, Tom Earles, Steven Ruder, Kevin Oresick, Chris Galstad, Michael Klaus

Proceedings Volume PC12440, PC124400S (2023) https://doi.org/10.1117/12.2651670

KEYWORDS: Quantum cascade lasers, Mid-IR, Continuous wave operation, Semiconductor lasers, Reliability, Mirrors, High power lasers

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Proceedings Article | 17 March 2023 Presentation

Graded-interfaces modeling of record-performance mid and long-wave infrared quantum cascade lasers

S. Suri, B. Knipfer, T. Grange, H. Guo, J. Kirch, L. Mawst, R. Marsland, D. Botez

Proceedings Volume PC12440, PC124400U (2023) https://doi.org/10.1117/12.2648055

KEYWORDS: Quantum cascade lasers, Thermal modeling, Mid-IR, Long wavelength infrared, Infrared radiation, Infrared lasers, Tomography, Photon transport, Crystals

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Proceedings Article | 15 March 2023 Presentation + Paper

Semi-insulating InP:Fe growth by hydride vapor phase epitaxy for advanced buried heterostructure quantum cascade lasers

Axel Strömberg, Balaji Manavaimaran, Xiaodan Pang, Richard Schatz, Oskars Ozolins, Sebastian Lourdudoss, David Stark, Mattias Beck, Giacomo Scalari, Jerome Faist, Jae Ha Ryu, Luke Mawst, Dan Botez, Robert Marsland, Gregory Maisons, Mathieu Carras, Yan-Ting Sun

Proceedings Volume 12440, 1244009 (2023) https://doi.org/10.1117/12.2645959

KEYWORDS: Quantum cascade lasers, Terahertz radiation, Waveguides, Vapor phase epitaxy, Heterojunctions, Scanning electron microscopy

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Proceedings Article | 9 March 2022 Presentation

Rigorous modeling of mid-IR QCLs with strong photon-induced carrier transport

Suraj Suri, Benjamin Knipfer, Jeremy Kirch, Luke Mawst, Thomas Grange, Dan Botez

Proceedings Volume PC12021, PC120210G (2022) https://doi.org/10.1117/12.2610016

KEYWORDS: Quantum cascade lasers, Photon transport, Mid-IR, Scattering, Resistance, Quantum efficiency, Laser scattering

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Proceedings Article | 5 March 2021 Presentation + Paper

Beam stability of buried-heterostructure quantum cascade lasers formed by ICP-etching and HVPE regrowth

Jae Ha Ryu, Jeremy Kirch, Benjamin Knipfer, Zerui Liu, Morgan Turville-Heitz, Tom Earles, Robert Marsland, Axel Strömberg, Giriprasanth Omanakuttan, Yan-Ting Sun, Sebastian Lourdudoss, Dan Botez, Luke Mawst

Proceedings Volume 11705, 1170516 (2021) https://doi.org/10.1117/12.2577342

KEYWORDS: Quantum cascade lasers, Measurement devices, Etching, Vapor phase epitaxy, Vapor etching, Silica, Optical testing, Mid-IR, Metalorganic chemical vapor deposition

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Proceedings Article | 5 March 2021 Presentation + Paper

Highly efficient long-wavelength infrared, step-tapered quantum cascade lasers

Kevin Oresick, Jeremy Kirch, Luke Mawst, Dan Botez

Proceedings Volume 11705, 1170515 (2021) https://doi.org/10.1117/12.2582436

KEYWORDS: Quantum cascade lasers, Long wavelength infrared, Electroluminescence, Waveguides, Scattering

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Proceedings Article | 24 February 2020 Presentation + Paper

Surface-emitting quantum cascade lasers with 2nd-order metal/semiconductor gratings for high continuous-wave performance

J. Ryu, C. Sigler, C. Boyle, J. Kirch, D. Lindberg, T. Earles, D. Botez, L. Mawst

Proceedings Volume 11301, 113011P (2020) https://doi.org/10.1117/12.2543595

KEYWORDS: Quantum cascade lasers, Cladding, Optical design, Continuous wave operation, Metalorganic chemical vapor deposition, Diffraction gratings, Antireflective coatings, Electron beam lithography

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Proceedings Article | 1 March 2019 Presentation + Paper

Effects of elastic scattering on high-performance step-taper active-region quantum cascade lasers

Colin Boyle, Kevin Oresick, Jeremy Kirch, Luke Mawst, Don Lindberg , Thomas Earles, Yuri Flores, Dan Botez

Proceedings Volume 10939, 109391L (2019) https://doi.org/10.1117/12.2510386

KEYWORDS: Quantum cascade lasers, Scattering, Picosecond phenomena, Laser scattering, Mid-IR, Electroluminescence, Continuous wave operation, Quantum efficiency, Internal quantum efficiency, Semiconductor lasers

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Proceedings Article | 14 March 2018 Presentation

Development of quantum and interband cascade lasers on silicon (Conference Presentation)

Charles Merritt, William Bewley, Chadwick Canedy, Chul Soo Kim, Igor Vurgaftman, Jerry Meyer, Alexander Spott, Jon Peters, Eric Stanton, Michael Davenport, Alfredo Torres, John Bowers, Jeremy Kirch, Luke Mawst, Dan Botez

Proceedings Volume 10536, 1053606 (2018) https://doi.org/10.1117/12.2288329

KEYWORDS: Silicon, Quantum cascade lasers, Mid-IR, Semiconductor lasers, Waveguides, Photonic devices, Silicon photonics, Integrated photonics, Laser development, Fabry–Perot interferometers

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SPIE Journal Paper | 27 September 2017 Open Access

Design considerations for λ ∼ 3.0- to 3.5-μm-emitting quantum cascade lasers on metamorphic buffer layers

Ayushi Rajeev, Chris Sigler, Thomas Earles, Yuri Flores, Luke Mawst, Dan Botez

OE, Vol. 57, Issue 01, 011017, (September 2017) https://doi.org/10.1117/12.10.1117/1.OE.57.1.011017

KEYWORDS: Quantum cascade lasers, Cladding, Gallium, Scattering, Picosecond phenomena, Quantum wells, Autoregressive models, Indium gallium phosphide, Aluminum, Electroluminescence

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SPIE Journal Paper | 19 September 2017 Open Access

Spectrally resolved modal characteristics of leaky-wave-coupled quantum cascade phase-locked laser arrays

Chris Sigler, Ricky Gibson, Colin Boyle, Jeremy Kirch, Donald Lindberg, Thomas Earles, Dan Botez, Luke Mawst, Robert Bedford

OE, Vol. 57, Issue 01, 011013, (September 2017) https://doi.org/10.1117/12.10.1117/1.OE.57.1.011013

KEYWORDS: Near field, Quantum cascade lasers, Optical engineering, Optical simulations, Sensors, Spectroscopy, Device simulation, Pulsed laser operation, Measurement devices, Staring arrays

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Proceedings Article | 20 April 2017 Presentation

Strain-compensated Ga(AsP)/Ga(AsBi)/Ga(AsP) quantum-well active-region lasers (Conference Presentation)

Honghyuk Kim, Yingxin Guan, Kamran Forghani, Thomas Kuech, Luke Mawst

Proceedings Volume 10123, 1012304 (2017) https://doi.org/10.1117/12.2251708

KEYWORDS: Semiconductor lasers, Current controlled current source, Quantum wells, Gallium arsenide, Annealing, Laser damage threshold, Pulsed laser operation, Waveguide lasers, Luminescence

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Proceedings Article | 20 February 2017 Presentation + Paper

High internal differential efficiency mid-infrared quantum cascade lasers

Dan Botez, Jeremy Kirch, Chun-Chieh Chang, Colin Boyle, Honghyuk Kim, Kevin Oresick, Chris Sigler, Luke Mawst, Minhyeok Jo, Jae Cheol Shin, Gun-Kim Doo, Don Lindberg, Thomas Earles

Proceedings Volume 10123, 101230Q (2017) https://doi.org/10.1117/12.2249537

KEYWORDS: Energy conversion efficiency, Mirrors, Continuous wave operation, Electrons, Scattering, Quantum cascade lasers, Mid-IR, Quantum efficiency, Internal quantum efficiency, Reliability

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Proceedings Article | 20 February 2017 Presentation + Paper

Quantum cascade lasers on silicon

Alexander Spott, Jon Peters, Michael Davenport, Eric Stanton, Chong Zhang, William Bewley, Charles Merritt, Igor Vurgaftman, Chul Soo Kim, Jerry Meyer, Jeremy Kirch, Luke Mawst, Dan Botez, John Bowers

Proceedings Volume 10123, 101230I (2017) https://doi.org/10.1117/12.2248760

KEYWORDS: Silicon, Quantum cascade lasers, Semiconductor lasers, Silicon photonics, Waveguides, Mid-IR, Optoelectronics, Photonic devices, Wafer bonding, Polishing, Optical design, Etching, Reactive ion etching

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Proceedings Article | 14 March 2016 Paper

Carrier dynamics in QW and bulk bismide and epitaxial lift off GaAs-In(Al)GaP double heterostructures grown by MOVPE for multi-junction solar cells

Yongkun Sin, Mark Peterson, Zachary Lingley, Stephen LaLumondiere, Steven Moss, Honghyuk Kim, Kamran Forghani, Yingxin Guan, Kangho Kim, Jaejin Lee, Luke Mawst, Thomas Kuech, Rao Tatavarti

Proceedings Volume 9743, 974313 (2016) https://doi.org/10.1117/12.2208804

KEYWORDS: Carrier dynamics, Quantum wells, Indium gallium phosphide, Multijunction solar cells, Heterojunctions, Gallium arsenide, Annealing, Epitaxial lateral overgrowth, Luminescence, Bismuth, Solar cells, Tellurium, Ions, Transmission electron microscopy

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III-V multi-junction solar cells are based on a triple-junction design that consists of an InGaP top junction, a GaAs middle junction, and a bottom junction that employs either a 1eV material grown on the GaAs substrate or InGaAs grown on the Ge substrate. The most promising 1 eV materials under extensive investigation are the bulk dilute nitride such as InGaAsN(Sb) lattice-matched to GaAs substrate and the dilute-bismide quantum well materials, such as GaAsBi, strain-compensated with GaAsP barriers. Both approaches have the potential to achieve high performance triple-junction solar cells. In addition, space satellite applications utilizing III-V triple-junction solar cells can have significantly reduced weight and high efficiency. An attractive approach to achieve these goals is to employ full-wafer epitaxial lift off (ELO) technology, which can eliminate the substrate weight and also enable multiple substrate re-usages. For the present study, we employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in MOVPE-grown bulk dilute bismide double heterostructures (DH). Carrier lifetime measurements are crucial to optimizing MOVPE materials growth. We have studied carrier dynamics in GaAsBi QW structures with GaAsP barriers. Carrier lifetimes were measured from GaAsBi DH samples at different stages of post-growth thermal annealing steps. Post-growth annealing yielded significant improvements in carrier lifetimes. Based on this study, single junction solar cells (SJSC) were grown and annealed under a variety of conditions and characterized. The SJSC annealed at 600 – 650 °C exhibited improved response in EQE spectra. In addition, we studied carrier dynamics in MOVPE-grown GaAs-In(Al)GaP DH samples grown on GaAs substrates. The structures were grown on top of a thin AlAs release layer, which allowed epitaxial layers grown on top of the AlAs layer to be removed from the substrate. The GaAs active layers had various doping densities and thicknesses. Our TR-PL results from both pre- and post-ELO processed GaAs-In(Al)GaP DH samples are reported.

Proceedings Article | 10 March 2016 Paper

Surface-emitting quantum cascade laser with 2nd-order metal-semiconductor gratings for single-lobe emission

C. Boyle, C. Sigler, J. Kirch, D. Lindberg, T. Earles, D. Botez, L. Mawst

Proceedings Volume 9767, 976714 (2016) https://doi.org/10.1117/12.2209105

KEYWORDS: Quantum cascade lasers, Optical design, Metals, Lasers, Semiconductor lasers, Gold, Phase shifts, Reflection, Continuous wave operation, Indium gallium arsenide

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Proceedings Article | 10 March 2016 Paper

Step-taper active-region quantum cascade lasers for carrier-leakage suppression and high internal differential efficiency

J. Kirch, C.-C. Chang, C. Boyle, L. Mawst, D. Lindberg, T. Earles, D. Botez

Proceedings Volume 9767, 976713 (2016) https://doi.org/10.1117/12.2209716

KEYWORDS: Quantum cascade lasers, Internal quantum efficiency, Continuous wave operation, Metalorganic chemical vapor deposition, Mid-IR, Electrons, Picosecond phenomena, Mirrors, Scattering, Laser damage threshold

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Proceedings Article | 16 March 2015 Paper

Time-resolved PL and TEM studies of MOVPE-grown bulk dilute nitride and bismide quantum well heterostructure

Yongkun Sin, Zachary Lingley, Mark Peterson, Miles Brodie, Steven Moss, Tae Wan Kim, Honghyuk Kim, Yingxin Guan, Kamran Forghani, Luke Mawst, Thomas Kuech

Proceedings Volume 9358, 93580I (2015) https://doi.org/10.1117/12.2076785

KEYWORDS: Transmission electron microscopy, Quantum wells, Gallium arsenide, Carrier dynamics, Heterojunctions, Temperature metrology, Annealing, Solar cells, Statistical analysis, Bismuth

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Proceedings Article | 10 March 2015 Paper

Destructive physical analysis of degraded quantum cascade lasers

Y. Sin, Z. Lingley, M. Brodie, N. Presser, S. Moss, J. Kirch, C. C. Chang, C. Boyle, L. Mawst, D. Botez, D. Lindberg, Thomas Earles

Proceedings Volume 9382, 93821P (2015) https://doi.org/10.1117/12.2076641

KEYWORDS: Quantum cascade lasers, Transmission electron microscopy, Quantum wells, Failure analysis, Scanning electron microscopy, Chemical analysis, Waveguides, Laser damage threshold, Remote sensing, Reliability

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Remarkable progress made in quantum cascade lasers (QCLs) has led them to find an increasing number of applications in remote sensing, chemical sensing, and free space communications, in addition to potential space applications. However, little has been reported on reliability and failure modes of QCLs although it is crucial to understand failure modes and underlying degradation mechanisms in developing QCLs that meet lifetime requirements for space missions. Focused ion beam (FIB) techniques have been employed to investigate failure modes in various types of laser diodes. Our group has also used FIB to study failure modes in single-mode and multi-mode InGaAs-AlGaAs strained QW lasers, but few groups have used this technique to investigate failure modes in QCLs. In our study, we report on destructive physical analysis (DPA) of degraded InGaAs-InAlAs QCLs using FIB and high-resolution TEM techniques. The active region of QCLs that we studied consisted of two-23 stage layers of InGaAs-InAlAs separated by a 0.5 μm thick InP spacer layer for 8.4μm QCLs and 30-stage layers of lattice-matched InGaAs-InAlAs heterostructure for 4.7μm QCLs. The MOVPE-grown laser structures were fabricated into deep-etched ridge waveguide QCLs. L-I-V-spectral characteristics were measured at RT under pulsed operation. Our 8.4μm QCLs with as-cleaved and HR-coated facets showed a laser threshold of 1.7 A and a threshold voltage of 13 V at RT, whereas our 4.7μm QCLs without facet coating showed threshold currents of 320 - 400 mA and threshold voltages of 13 - 13.5V. Failures were generated via short-term tests of QCLs. FIB systems were used to study the damage area on the front facet and also to prepare TEM cross sections at different locations along the waveguide for defect and chemical analyses using a HR-TEM. In contrast to the COMD damaged area showing as a blister on the front facet of QW lasers, the damaged area of QCLs was significantly extended into the InP substrate due to a much less absorption of lasing photons in QCLs. Our detailed destructive physical analysis results are reported including defect, structural, and chemical analysis results from degraded QCLs.

Proceedings Article | 10 March 2015 Paper

Above-threshold numerical modeling of high-index-contrast photonic-crystal quantum cascade lasers

Anatoly Napartovich, N. Elkin, D. Vysotsky, J. Kirch, C. Sigler, D. Botez, L. Mawst, A. Belyanin

Proceedings Volume 9382, 93821L (2015) https://doi.org/10.1117/12.2076504

KEYWORDS: Quantum cascade lasers, Refractive index, Beam propagation method, Wave propagation, Indium gallium arsenide, Absorption, Magnetism, Thermal effects, Semiconductor lasers, Hybrid silicon lasers

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Proceedings Article | 10 March 2015 Paper

Planarized process for resonant leaky-wave coupled phase-locked arrays of mid-IR quantum cascade lasers

C.-C. Chang, J. Kirch, C. Boyle, C. Sigler, L. Mawst, D. Botez, B. Zutter, P. Buelow, K. Schulte, T. Kuech, T. Earles

Proceedings Volume 9382, 938213 (2015) https://doi.org/10.1117/12.2075667

KEYWORDS: Quantum cascade lasers, Chemical elements, Etching, Indium gallium arsenide, Plasma etching, Wet etching, Polishing, Surface finishing, Array processing, Mid-IR

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Proceedings Article | 8 February 2015 Paper

Quantum-cascade-laser active regions on metamorphic buffer layers

L. Mawst, A. Rajeev, J. Kirch, T. Kim, D. Botez, B. Zutter, P. Buelow, K. Schulte, T. Kuech, A. Wood, S. Babcock, T. Earles

Proceedings Volume 9370, 93700E (2015) https://doi.org/10.1117/12.2075457

KEYWORDS: Quantum cascade lasers, Stereolithography, Chemical mechanical planarization, Surface finishing, Etching, Diffraction, Gallium arsenide, Indium, Electroluminescence, Wet etching

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Proceedings Article | 7 March 2014 Paper

Variable temperature carrier dynamics in bulk (In)GaAsNSb materials grown by MOVPE for multi-junction solar cells

Yongkun Sin, Zachary Lingley, Stephen LaLumondiere, Nathan Wells, William Lotshaw, Steven Moss, Tae Wan Kim, Luke Mawst, Thomas Kuech

Proceedings Volume 8981, 89811A (2014) https://doi.org/10.1117/12.2037385

KEYWORDS: Gallium arsenide, Carrier dynamics, Temperature metrology, Multijunction solar cells, Transmission electron microscopy, Annealing, Indium gallium phosphide, Antimony, Germanium, Picosecond phenomena

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Proceedings Article | 27 February 2014 Paper

High-power and high-efficiency broad-area diode laser emitting at 1.5 um

T. Garrod, D. Olson, M. Klaus, C. Zenner, C. Galstad, F. Brunet, L. Mawst, D. Botez

Proceedings Volume 9002, 90021F (2014) https://doi.org/10.1117/12.2040458

KEYWORDS: Semiconductor lasers, Continuous wave operation, Absorption, Temperature metrology, High power lasers, Reliability, Quantum wells, Laser development, Doping, Waveguides

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Proceedings Article | 25 March 2013 Paper

Carrier dynamics in bulk 1eV InGaAsNSb materials and epitaxial lift off GaAs-InAlGaP layers grown by MOVPE for multi-junction solar cells

Yongkun Sin, Stephen LaLumondiere, William Lotshaw, Steven Moss, Tae Wan Kim, Kamran Forghani, Luke Mawst, Thomas Kuech, Rao Tatavarti, Andree Wibowo, Noren Pan

Proceedings Volume 8620, 86201L (2013) https://doi.org/10.1117/12.2001528

KEYWORDS: Epitaxial lateral overgrowth, Gallium arsenide, Carrier dynamics, Picosecond phenomena, Antimony, Multijunction solar cells, Solar cells, Zinc, Electroluminescence, Annealing

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III-V multi-junction solar cells are based on a triple-junction design that consists of an InGaP top junction, a GaAs middle junction, and a bottom junction that employs either a 1eV material grown on the GaAs substrate or InGaAs grown on the Ge substrate. The most promising 1 eV material that is currently under extensive investigation is bulk dilute nitride such as InGaAsN(Sb) lattice matched to GaAs substrates. Both approaches utilizing dilute nitrides and lattice-mismatched InGaAs layers have a potential to achieve high performance triple-junction solar cells. In addition, it will be beneficial for both commercial and space applications if III-V triple-junction solar cells can significantly reduce weight and can be manufactured cost effectively while maintaining high efficiency. The most attractive approach to achieve these goals is to employ full-wafer epitaxial lift off (ELO) technology, which can eliminate the substrate weight and also enable multiple substrate re-usages. For the present study, we employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in MOVPE-grown bulk dilute nitride layers lattice matched to GaAs substrates, where carrier lifetime measurements are crucial in optimizing MOVPE materials growth. We studied carrier dynamics in InGaAsN(Sb) layers with different amounts of N incorporated. Carrier lifetimes were also measured from InGaAsN(Sb) layers at different stages of post-growth thermal annealing steps. Post-growth annealing yielded significant improvements in carrier lifetimes of InGaAsNSb double hetero-structure (DH) samples compared to InGaAsN DH samples possibly due to the surfactant effect of Sb. In addition, we studied carrier dynamics in MOVPE-grown GaAs-InAl(Ga)P layers grown on GaAs substrates. The structures were grown on top of a thin AlAs release layer, which allowed epitaxial layers grown on top of the AlAs layer to be removed from the substrate. The GaAs layers had various doping densities and thicknesses. We present our TR-PL results from both pre- and post-ELO processed GaAs-InAl(Ga)P samples.

Proceedings Article | 26 February 2013 Paper

High-power and high-efficiency distributed feedback (DFB) lasers operating in the 1.4-1.6 mm range for eye-safe applications

Toby Garrod, François Brunet, Christian Galstad, Michael Klaus, Don Olson, Chris Zenner, Yan Xiao, Luke Mawst, Dan Botez

Proceedings Volume 8605, 86050I (2013) https://doi.org/10.1117/12.2004060

KEYWORDS: Semiconductor lasers, Continuous wave operation, High power lasers, Laser development, Semiconducting wafers, Fabry–Perot interferometers, Laser applications, Diodes, Absorption, Semiconductors

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Proceedings Article | 28 February 2012 Paper

Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells

Yongkun Sin, Stephen LaLumondiere, Brendan Foran, William Lotshaw, Steven Moss, Tae Wan Kim, Peter Dudley, Jeremy Kirch, Steven Ruder, Luke Mawst, Thomas Kuech

Proceedings Volume 8255, 825516 (2012) https://doi.org/10.1117/12.906424

KEYWORDS: Indium gallium arsenide, Chemical mechanical planarization, Gallium arsenide, Transmission electron microscopy, Surface roughness, Carrier dynamics, Solar cells, Indium gallium phosphide, Luminescence, Antimony

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Proceedings Article | 22 February 2012 Paper

Characteristics of bulk InGaAsN and InGaAsSbN materials grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application

TaeWan Kim, Toby Garrod, Kangho Kim, Jaejin Lee, Luke Mawst, T. Kuech, S. LaLumondiere, Y. Sin, W. Lotshaw, S. Moss

Proceedings Volume 8256, 82561D (2012) https://doi.org/10.1117/12.906961

KEYWORDS: Solar cells, Carbon, Gallium arsenide, Picosecond phenomena, Metals, Annealing, Antimony, External quantum efficiency, Vapor phase epitaxy, Antireflective coatings

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Proceedings Article | 9 February 2012 Paper

Numerical studies of thermal lensing effects on high-CW-power single-spatial- mode diode lasers

Anatoly Napartovich, Nikolay Elkin, Dmitry Vysotsky, Dan Botez, Luke Mawst

Proceedings Volume 8277, 82771G (2012) https://doi.org/10.1117/12.907212

KEYWORDS: Thermal effects, Quantum wells, Waveguides, Semiconductor lasers, Continuous wave operation, Refractive index, Modes of laser operation, Diffusion, Thermography

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Proceedings Article | 9 February 2012 Paper

Tapered active-region, mid-infrared quantum cascade lasers for complete suppression of carrier-leakage currents

Dan Botez, Jae Cheol Shin, Jeremy Kirch, Chun-Chieh Chang, Luke Mawst, Thomas Earles

Proceedings Volume 8277, 82770W (2012) https://doi.org/10.1117/12.907439

KEYWORDS: Quantum cascade lasers, Quantum wells, Electrons, Mid-IR, Heatsinks, Picosecond phenomena, Continuous wave operation, Quantum efficiency, Doping

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Proceedings Article | 21 February 2011 Paper

Carrier dynamics in MOVPE-grown bulk dilute nitride materials for multi-junction solar cells

Yongkun Sin, Stephen LaLumondiere, Toby Garrod, Tae Wan Kim, Jeremy Kirch, Luke Mawst, William Lotshaw, Steven Moss

Proceedings Volume 7933, 79330H (2011) https://doi.org/10.1117/12.873894

KEYWORDS: Picosecond phenomena, Annealing, Antimony, Gallium arsenide, Carrier dynamics, Carbon, Multijunction solar cells, Doping, Streak cameras, Diffusion

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Proceedings Article | 17 February 2011 Paper

The temperature dependence of key electro-optical characteristics for mid-infrared emitting quantum cascade lasers

Dan Botez, Jae Cheol Shin, Sushil Kumar, Jeremy Kirch, Chun-Chieh Chang, Luke Mawst, Igor Vurgaftman, Jerry Meyer, Alfredo Bismuto, Borislav Hinkov, Jerome Faist

Proceedings Volume 7953, 79530N (2011) https://doi.org/10.1117/12.874197

KEYWORDS: Quantum cascade lasers, Quantum wells, Quantum efficiency, Mid-IR, Heatsinks, Scattering, Electro optics, External quantum efficiency, Continuous wave operation

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Proceedings Article | 17 February 2011 Paper

Nanopatterned quantum dot active region lasers on InP substrates

L. Mawst, J. H. Park, Y. Huang, J. Kirch, Y. Sin, B. Foran, C.-C. Liu, P. Nealey, T. Kuech

Proceedings Volume 7953, 795304 (2011) https://doi.org/10.1117/12.875199

KEYWORDS: Nanostructures, Indium arsenide, Indium gallium arsenide, Quantum dots, Electroluminescence, Metalorganic chemical vapor deposition, Scanning electron microscopy, Dielectrics, Photomasks, Semiconductor lasers

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SPIE Journal Paper | 1 November 2010 Open Access

Electron leakage and its suppression via deep-well structures in 4.5- to 5.0-µm-emitting quantum cascade lasers

Dan Botez, Jae Cheol Shin, Sushil Kumar, Luke Mawst, Igor Vurgaftman, Jerry Meyer

OE, Vol. 49, Issue 11, 111108, (November 2010) https://doi.org/10.1117/12.10.1117/1.3509368

KEYWORDS: Quantum cascade lasers, Scattering, Quantum efficiency, Quantum wells, Heatsinks, Temperature metrology, Picosecond phenomena, Optical engineering, Continuous wave operation

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Proceedings Article | 26 February 2010 Paper

Radiative efficiency of MOCVD grown QD lasers

Luke Mawst, Gene Tsvid, Peter Dudley, Jeremy Kirch, J. Park, N. Kim

Proceedings Volume 7597, 759716 (2010) https://doi.org/10.1117/12.840970

KEYWORDS: Indium gallium arsenide, Quantum efficiency, Gallium arsenide, Metalorganic chemical vapor deposition, Quantum wells, Image segmentation, Laser damage threshold, External quantum efficiency, Calibration, Semiconductor lasers

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Proceedings Article | 16 February 2010 Paper

Heterogeneous integration of thin film compound semiconductor lasers and SU8 waveguides on SiO2/Si

Sabarni Palit, Jeremy Kirch, Luke Mawst, Thomas Kuech, Nan Marie Jokerst

Proceedings Volume 7607, 76070I (2010) https://doi.org/10.1117/12.842379

KEYWORDS: Waveguides, Laser bonding, Thin films, Semiconductor lasers, Silicon, Silica, Optical simulations, Polymer multimode waveguides, Polymers, Etching

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Proceedings Article | 12 February 2010 Paper

Suppression of carrier leakage in 4.8 μm - emitting quantum cascade lasers

D. Botez, J. C. Shin, L. Mawst, I. Vurgaftman, J. Meyer, S. Kumar

Proceedings Volume 7616, 76160N (2010) https://doi.org/10.1117/12.842593

KEYWORDS: Quantum cascade lasers, Scattering, Heatsinks, Temperature metrology, Quantum wells, Quantum efficiency, Picosecond phenomena, Electronics, Continuous wave operation

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Proceedings Article | 12 February 2010 Paper

Thin film edge emitting lasers integrated onto silicon

Nan Jokerst, Sabarni Palit, Jeremy Kirch, Gene Tsvid, Luke Mawst, Thomas Kuech

Proceedings Volume 7616, 76160S (2010) https://doi.org/10.1117/12.846414

KEYWORDS: Thin films, Silicon, Laser bonding, Semiconductor lasers, Waveguides, Etching, Thin film devices, Silicon films, Metals, Laser damage threshold

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Proceedings Article | 14 February 2009 Paper

Selective MOCVD growth of InGaAs/GaAs and InGaAs/InP quantum dots employing diblock copolymer nanopatterning

Luke Mawst, Joo Hyung Park, Manish Rathi, Thomas Kuech, Varun Verma, James Coleman

Proceedings Volume 7224, 722407 (2009) https://doi.org/10.1117/12.810882

KEYWORDS: Gallium arsenide, Indium gallium arsenide, Plasma, Nanostructures, Metalorganic chemical vapor deposition, Oxygen, Wet etching, Silica, Reactive ion etching, Quantum dots

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Proceedings Article | 3 February 2009 Paper

Characteristics of deep-well 4.8-um emitting quantum-cascade lasers grown by MOCVD

J. C. Shin, M. D'Souza, D. Xu, J. Kirch, L. J. Mawst, D. Botez, I. Vurgaftman, J. R. Meyer

Proceedings Volume 7230, 723013 (2009) https://doi.org/10.1117/12.808268

KEYWORDS: Quantum cascade lasers, Quantum wells, Metalorganic chemical vapor deposition, Laser damage threshold, Continuous wave operation, Superlattices, Temperature metrology, Electro optics, Reliability, Fabrication

Read Abstract +

Proceedings Article | 3 February 2009 Paper

Native-oxide-confined mid-IR quantum cascade lasers via non-selective oxygen-enhanced wet oxidation

Christopher Seibert, Mithin D'Souza, Jae C. Shin, Luke Mawst, Dan Botez, Douglas Hall

Proceedings Volume 7230, 72301O (2009) https://doi.org/10.1117/12.809788

KEYWORDS: Quantum cascade lasers, Oxides, Etching, Mid-IR, Waveguides, Capacitors, Dielectrics, Metalorganic chemical vapor deposition, Semiconductor lasers, Oxidation

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SPIE Journal Paper | 1 January 2009

Nanoscale selective growth and optical characteristics of quantum dots on III-V substrates prepared by diblock copolymer nanopatterning

Joo Hyung Park, Chi-Chun Liu, Manish Rathi, Luke Mawst, Paul Nealey, Thomas Kuech

JNP, Vol. 3, Issue 01, 031604, (January 2009) https://doi.org/10.1117/12.10.1117/1.3085990

KEYWORDS: Gallium arsenide, Etching, Dielectrics, Plasma, Metalorganic chemical vapor deposition, Quantum dots, Nanostructures, Gallium, Photomasks, Dry etching

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SPIE Journal Paper | 1 January 2009

Progress towards intersubband quantum-box lasers for highly efficient continuous wave operation in the mid-infrared

Dan Botez, Gene Tsvid, Mithun D'Souza, Manish Rathi, Jae-Cheol Shin, Jeremy Kirch, Luke Mawst, Thomas Kuech, Igor Vurgaftman, Jerry Meyer, Jason Plant, George Turner

JNP, Vol. 3, Issue 01, 031606, (January 2009) https://doi.org/10.1117/12.10.1117/1.3085992

KEYWORDS: Quantum cascade lasers, Continuous wave operation, Mid-IR, Dry etching, Quantum wells, Electrons, Dielectrics, Quantum efficiency, Interfaces, Etching

Read Abstract +

Proceedings Article | 12 May 2006 Paper

High power conversion efficiency and wavelength-stabilized narrow bandwidth 975nm diode laser pumps

M. Kanskar, J. Cai, C. Galstad, Y. He, S. Macomber, E. Stiers, S. Tatavarti-Bharatam, D. Botez, L. Mawst

Proceedings Volume 6216, 621609 (2006) https://doi.org/10.1117/12.669036

KEYWORDS: Semiconductor lasers, Doping, Absorption, Laser scattering, Scattering, Heatsinks, Resistance, Quantum efficiency, High power lasers

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Proceedings Article | 10 February 2006 Paper

Leaky defect modes of two-dimensional VCSEL arrays

L. Mawst, L. Bao, N. Kim, N. Elkin, A. Napartovich, V. Troshchieva, D. Vysotsky

Proceedings Volume 6132, 61320G (2006) https://doi.org/10.1117/12.660843

KEYWORDS: Vertical cavity surface emitting lasers, Photonics, 3D modeling, Mirrors, Absorption, Metals, Optical simulations, Gallium arsenide, Diffraction

Read Abstract +

Proceedings Article | 28 April 2005 Paper

Above threshold modeling of single-spatial-mode edge-emitting diode lasers

A. Napartovich, N. Elkin, A. Sukharev, V. Troshchieva, D. Vysotsky, M. Nesnidal, E. Stiers, Luke Mawst, Dan Botez

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.589551

KEYWORDS: Waveguides, Semiconductor lasers, Laser damage threshold, Quantum wells, Diffusion, Interfaces, Near field optics, Wave propagation, Reflectivity, 3D modeling

Read Abstract +

Proceedings Article | 1 April 2005 Paper

High-power conversion efficiency Al-free diode lasers for pumping high-power solid-state laser systems

Manoj Kanskar, Thomas Earles, Troy Goodnough, Eric Stiers, Dan Botez, Luke Mawst

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.597097

KEYWORDS: Semiconductor lasers, Doping, Resistance, Absorption, High power lasers, Solid state lasers, Laser scattering, Quantum efficiency, Laser systems engineering, External quantum efficiency

Read Abstract +

Proceedings Article | 1 April 2005 Paper

Dilute nitride type-II 'W' quantum well lasers for the near-infrared and mid-infrared

Jerry Meyer, Igor Vurgaftman, Anish Khandekar, B. Hawkins, J. Yeh, Luke Mawst, Thomas Kuech, Nelson Tansu

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.597115

KEYWORDS: Gallium arsenide, Quantum wells, Mid-IR, Antimony, Stereolithography, Gallium, Semiconductor lasers, Annealing, Transmission electron microscopy, Laser applications

Read Abstract +

Proceedings Article | 1 April 2005 Paper

Characteristics of MOCVD-grown dilute-nitride quantum well lasers

Luke Mawst, Jeng-Ya Yeh, T. Van Roy, Nelson Tansu

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.597123

KEYWORDS: Quantum wells, Gallium arsenide, Annealing, Nitrogen, Laser damage threshold, Gallium, Stereolithography, Metalorganic chemical vapor deposition, Quantum efficiency, External quantum efficiency

Read Abstract +

Proceedings Article | 16 June 2004 Paper

Modal characteristics of large-aperture ARROW VCSELs

Nam-Heon Kim, Tae-Woo Lee, Ling Bao, Susan Hagness, Luke Mawst

Proceedings Volume 5364, (2004) https://doi.org/10.1117/12.524525

KEYWORDS: Vertical cavity surface emitting lasers, Metals, Finite-difference time-domain method, Reflectors, Absorption, Thermal effects, Optical filters, Waveguides, High power lasers, Gallium arsenide

Read Abstract +

Proceedings Article | 3 July 2003 Paper

Performace and reliability of ARROW single-mode and 100-um laser diode and the use of NAM in Al-free lasers

Manoj Kanskar, Mike Nesnidal, Steve Meassick, Arkadi Goulakov, Eric Stiers, Zheng Dai, Thomas Earles, David Forbes, Darren Hansen, Patrick Corbett, Ling Zhang, Troy Goodnough, Lance LeClair, Nigel Holehouse, Dan Botez, Luke Mawst

Proceedings Volume 4995, (2003) https://doi.org/10.1117/12.480194

KEYWORDS: Semiconductor lasers, Waveguides, Reliability, Fiber Bragg gratings, Quantum wells, Heatsinks, Absorption, Nonabsorbing mirrors, Fiber lasers, Waveguide lasers

Read Abstract +

Proceedings Article | 3 July 2003 Paper

MOCVD-grown InGaAsN quantum-well lasers

Luke Mawst, Nelson Tansu, Jeng-Ya Yeh

Proceedings Volume 4995, (2003) https://doi.org/10.1117/12.475793

KEYWORDS: Quantum wells, Laser damage threshold, Indium gallium arsenide, Semiconductor lasers, Temperature metrology, Transparency, Metalorganic chemical vapor deposition, Gallium arsenide, Nitrogen, Continuous wave operation

Read Abstract +

Proceedings Article | 17 June 2003 Paper

Modeling and observations of modal structure in antiguided VCSEL array

Nickolai Elkin, Anatoly Napartovich, Dmitri Vysotsky, Vera Troshchieva, L. Bao, N. Kim, Delai Zhou, Luke Mawst

Proceedings Volume 4994, (2003) https://doi.org/10.1117/12.475727

KEYWORDS: Vertical cavity surface emitting lasers, Gallium arsenide, Chemical elements, Metals, Diffraction, Metalorganic chemical vapor deposition, Aluminum, Near field, Continuous wave operation, Pulsed laser operation

Read Abstract +

Proceedings Article | 12 June 2002 Paper

Analysis temperature characteristics of highly strained InGaAs-GaAsP-GaAs (I>1.17 mm) quantum well lasers

Nelson Tansu, Luke Mawst

Proceedings Volume 4646, (2002) https://doi.org/10.1117/12.470529

KEYWORDS: Quantum wells, Transparency, Quantum efficiency, Temperature metrology, Semiconductor lasers, External quantum efficiency, Internal quantum efficiency, Indium gallium arsenide, Laser damage threshold, Absorption

Read Abstract +

Proceedings Article | 4 June 2002 Paper

Modal characteristics of 2D antiguided VCSEL arrays

Delai Zhou, Anatoly Napartovich, Nickolai Elkin, Dmitri Vysotsky, Luke Mawst

Proceedings Volume 4649, (2002) https://doi.org/10.1117/12.469231

KEYWORDS: Vertical cavity surface emitting lasers, Near field, Absorption, Lasers, Optical simulations, Chemical elements, Wave propagation, 3D modeling, Beam propagation method

Read Abstract +

Proceedings Article | 6 June 2001 Paper

InGaAs/GaAsP/InGaP strain-compensated quantum well (lambda=1.17 um) diode lasers on GaAs

Nelson Tansu, Luke Mawst

Proceedings Volume 4287, (2001) https://doi.org/10.1117/12.429800

KEYWORDS: Quantum wells, Semiconductor lasers, Gallium arsenide, Indium gallium arsenide, Internal quantum efficiency, Quantum efficiency, External quantum efficiency, Cladding, Laser damage threshold, Transparency

Read Abstract +

Proceedings Article | 17 May 2001 Paper

Antiguided vertical-cavity surface-emitting lasers

Luke Mawst, Delai Zhou

Proceedings Volume 4285, (2001) https://doi.org/10.1117/12.426880

KEYWORDS: Vertical cavity surface emitting lasers, Waveguides, Reflectors, 3D modeling, Metalorganic chemical vapor deposition, Gallium arsenide, Semiconductor lasers, Combustion, Optical filters

Read Abstract +

Proceedings Article | 17 May 2001 Paper

Integrated LED-photodiode chemical sensor

Jeng-Ya Yeh, Suwandi Rusli, Soraya Pornsuwan, Albena Ivanisevic, Anne-Marie Nickel, Arthur Ellis, Thomas Kuech, Luke Mawst

Proceedings Volume 4285, (2001) https://doi.org/10.1117/12.426898

KEYWORDS: Light emitting diodes, Photodiodes, Electroluminescence, Chemical fiber sensors, Chemical analysis, Semiconductors, PIN photodiodes, Sensors, Measurement devices, Gallium arsenide

Read Abstract +

The presence of surface states, which pins the Fermi level within the bandgap, contributes to the degradation in the performance of light-emitting diodes (LEDs) and p-i-n photodiodes due to an increase in the non-radiative recombination rate. Chemical modification on the facet or device surface can greatly enhance the output power of LED's and photocurrent of p-i-n photodiodes. Adsorbing molecules can change either the density or energy distribution of surface states. This effect leads to changes in surface recombination which result in systematic variations in light output, and thus the effect can be used for detection of analytes. This mechanism was used to realize a compact chemical sensor based on III/V LED/Detector structures. Initially, we fabricated InGaAlP/InGaP/InGaAlP double heterostructure (DH) LEDs (400 X 1000 micrometer²) with three different active region thicknesses: 50, 250 and 500 nm. In constant current mode, the DH LED exhibits electroluminescence (EL) at approximately 670 nm for an InGaP active region. The EL intensity changes of the LED in various gaseous ambients (NH₃, NH₂(CH₃), NH(CH₃)₂, N(CH₃)₃, and SO₂) are measured. The data show reproducible trends: DH LED structures with thicker active regions result in larger emission intensity changes due to analyte adsorption. Our findings are consistent with active-layer surface area dependence. Thicker active layer devices have larger carrier losses due to nonradiative surface recombination, and thus show a stronger sensitivity to the surface chemistry. Furthermore, we used this DH LED design to build a highly versatile compact sensor. The MOCVD-grown LED wafer is patterned and chemically etched to fabricate integrated GaAs/AlGaAs edge-emitting LEDs and p-i-n photodiode units. The light emitted from the edge-emitting LEDs is absorbed at the sidewall of the adjacent photodiode, and the resulting photocurrent is measured. The device design concept is based on increasing the ratio of analyte-accessible facet area to the volume of the active region. This integrated LED- photodiode device can serve as an on-line chemical sensor for a variety of analytes.

Proceedings Article | 6 August 1999 Paper

Super-high-power operation of 0.98-um InGaAs(P)/InGaP/GaAs-broadened waveguide separate confinement heterostructure quantum well diode lasers

Dmitri Garbuzov, Mikhail Maiorov, V. Khalfin, Maria Harvey, A. Al-Muhanna, Luke Mawst, Dan Botez, John Connolly

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356942

KEYWORDS: Temperature metrology, Copper, Waveguides, Solids, Quantum wells, Semiconductor lasers, Heatsinks, Resistance, Continuous wave operation

Proceedings Article | 1 April 1999 Paper

1.6-W cw coherent power from large-index-step (delta n=0.1) antiguided laser arrays

Haiquan Yang, Jerry Lopez, Luke Mawst, Jerome Wade, Thomas Earles, Dan Botez

Proceedings Volume 3628, (1999) https://doi.org/10.1117/12.344518

KEYWORDS: Thermal effects, Continuous wave operation, Semiconductor lasers, External quantum efficiency, Quantum efficiency, Gallium arsenide, Indium gallium arsenide, Lasers, Waveguides

Read Abstract +

Proceedings Article | 7 April 1998 Paper

High-power Al-free active-region diode lasers

Luke Mawst, Jerome Wade, A. Al-Muhanna

Proceedings Volume 3284, (1998) https://doi.org/10.1117/12.304431

KEYWORDS: Semiconductor lasers, Continuous wave operation, Quantum wells, High power lasers, Metalorganic chemical vapor deposition, Gallium arsenide, Indium gallium phosphide, Cladding, Waveguides

Read Abstract +

Proceedings Article | 2 May 1997 Paper

Lateral-mode selection in phase-locked antiguided arrays via distributed-feedback grating

Mike Nesnidal, Luke Mawst, Dan Botez, Jens Buus

Proceedings Volume 3001, (1997) https://doi.org/10.1117/12.273815

KEYWORDS: Photonics, Semiconductor lasers, Organic light emitting diodes, Dielectrics, Gallium arsenide, Structural design, Fabry–Perot interferometers, Optical coatings

Read Abstract +

Proceedings Article | 2 May 1997 Paper

High-power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers

Luke Mawst, Dan Botez

Proceedings Volume 3001, (1997) https://doi.org/10.1117/12.273784

KEYWORDS: Semiconductor lasers, Continuous wave operation, Waveguides, High power lasers, Semiconductors, Gallium arsenide, Resistance, Reliability, Cladding

Read Abstract +

Proceedings Article | 12 April 1996 Paper

High-power narrow-beam single-mode ARROW-type semiconductor diode lasers

Luke Mawst, Arnab Bhattacharya, Mike Nesnidal, James Lopez

Proceedings Volume 2682, (1996) https://doi.org/10.1117/12.237655

KEYWORDS: Semiconductor lasers, Continuous wave operation, Waveguides, High power lasers, Semiconductors, Laser optics, Reflectors, Absorption, Diffraction

Read Abstract +

Proceedings Article | 28 April 1995 Paper

High-power single-mode antiresonant reflecting optical waveguide-type diode lasers

Luke Mawst

Proceedings Volume 2382, (1995) https://doi.org/10.1117/12.208444

KEYWORDS: Semiconductor lasers, Waveguides, Indium gallium phosphide, High power lasers, Cladding, Quantum wells, Waveguide lasers, Gallium arsenide, Laser optics, Singular optics

Read Abstract +

Proceedings Article | 24 April 1995 Paper

High-power coherent sources based on antiguided structures

Luke Mawst, Dan Botez

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206899

KEYWORDS: Indium gallium phosphide, Oscillators, Near field optics, Gallium arsenide, Luminescence, Transmission electron microscopy, Quantum wells, Diffraction, Active optics

Read Abstract +

Proceedings Article | 1 June 1994 Paper

300-mW diffraction-limited beam from flat-phase-front antiguided master oscillator power amplifier

Charles Zmudzinski, Chan Tu, Dan Botez, Luke Mawst, Rashit Nabiev, Stephen Fox, I.-Fan Wu, Christophe Dauga, Mario Dagenais, Michael Jansen

Proceedings Volume 2148, (1994) https://doi.org/10.1117/12.176601

KEYWORDS: Oscillators, Optical amplifiers, Molybdenum, Near field, Antireflective coatings, Refractive index, Reflectors, Fluctuations and noise, Instrument modeling, Hole burning spectroscopy

Read Abstract +

Proceedings Article | 16 June 1993 Paper

Coherent 1-W cw operation of large-aperture resonant arrays of antiguides

Charles Zmudzinski, Dan Botez, Luke Mawst, Chan Tu

Proceedings Volume 1850, (1993) https://doi.org/10.1117/12.146904

KEYWORDS: Continuous wave operation, Semiconductor lasers, Spatial filters, Near field, Diffraction, Technologies and applications, Optical filters, Laser applications, Chemical elements

Read Abstract +

Proceedings Article | 16 June 1993 Paper

Single-mode ARROW-type diode lasers

Luke Mawst, Dan Botez, Charles Zmudzinski, Chan Tu, Michael Jansen

Proceedings Volume 1850, (1993) https://doi.org/10.1117/12.146921

KEYWORDS: Semiconductor lasers, Waveguides, Cladding, Near field, Technologies and applications, Pulsed laser operation, Near field optics, Continuous wave operation, Laser applications

Read Abstract +

Proceedings Article | 2 December 1992 Paper

High-performance surface-emitting lasers with dry-etched facets

Szutsun Ou, Michael Jansen, Jane Yang, Moshe Sergant, Luke Mawst, Dan Botez, Thomas Roth, Cynthia Hess, Chan Tu

Proceedings Volume 1703, (1992) https://doi.org/10.1117/12.138375

KEYWORDS: Micromirrors, Reactive ion etching, Etching, Semiconductor lasers, Gallium arsenide, Mirrors, Semiconducting wafers, Quantum wells, Tolerancing

Read Abstract +

Proceedings Article | 26 June 1992 Paper

Recent advances in antiguided diode laser arrays

Luke Mawst, Dan Botez, Michael Jansen, Thomas Roth, Charles Zmudzinski, Chan Tu, John Yun

Proceedings Volume 1634, (1992) https://doi.org/10.1117/12.59118

KEYWORDS: Semiconductor lasers, Chemical elements, Technologies and applications, Quantum wells, Aluminum, Metalorganic chemical vapor deposition, Gallium arsenide, Near field, Spatial filters

Read Abstract +

Proceedings Article | 26 June 1992 Paper

Injection locking of antiguided resonant optical waveguide arrays

Michael Jansen, Dan Botez, Luke Mawst, Thomas Roth, Jane Yang, Phillip Hayashida, Lawrence Dozal

Proceedings Volume 1634, (1992) https://doi.org/10.1117/12.59120

KEYWORDS: Stereolithography, Molybdenum, Semiconductor lasers, Near field, Technologies and applications, Waveguides, Dye lasers, Optical arrays, Oscillators, Aerospace engineering

Read Abstract +

Proceedings Article | 26 June 1992 Paper

High-power CW operation of laser diodes with etched micromirrors

Michael Jansen, Szutsun Ou, Jane Yang, Moshe Sergant, Thomas Roth, Luke Mawst, Cynthia Hess, Chan Tu, Dan Botez

Proceedings Volume 1634, (1992) https://doi.org/10.1117/12.59125

KEYWORDS: Micromirrors, Semiconductor lasers, Gallium arsenide, Reactive ion etching, Continuous wave operation, Etching, Cladding, Mirrors, Tolerancing

Read Abstract +

Proceedings Article | 1 September 1991 Paper

High-power coherent diode lasers

Dan Botez, Luke Mawst, Michael Jansen, Eric Anderson, Szutsun Ou, Moshe Sergant, Gary Peterson, Thomas Roth, John Rozenbergs

Proceedings Volume 1474, (1991) https://doi.org/10.1117/12.44911

KEYWORDS: Semiconductor lasers, Signal processing, Diffraction, High power lasers, Pulsed laser operation, Optical components, Waveguides, Refractive index, Resonators

Read Abstract +

Proceedings Article | 1 July 1991 Paper

Monolithic two-dimensional surface-emitting laser diode arrays with 45 degree micromirrors

Michael Jansen, Jane Yang, Szutsun Ou, Moshe Sergant, Luke Mawst, John Rozenbergs, Jaroslava Z. Wilcox, Dan Botez

Proceedings Volume 1418, (1991) https://doi.org/10.1117/12.43792

KEYWORDS: Semiconductor lasers, Micromirrors, Electrodes, Tolerancing, Measurement devices, Mirrors, Near field, Semiconducting wafers, Packaging, Polishing

Read Abstract +

Proceedings Article | 1 July 1991 Paper

0.36-W cw diffraction-limited-beam operation from phase-locked arrays of antiguides

Luke Mawst, Dan Botez, Eric Anderson, Michael Jansen, Szutsun Ou, Moshe Sergant, Gary Peterson, Thomas Roth, John Rozenbergs

Proceedings Volume 1418, (1991) https://doi.org/10.1117/12.43821

KEYWORDS: Semiconductor lasers, Pulsed laser operation, Continuous wave operation, Laser applications, Diffraction, Metalorganic chemical vapor deposition, Cladding, Waveguides, Gallium arsenide

Read Abstract +

Proceedings Article | 1 June 1991 Paper

Modulation characteristics of high-power phase-locked arrays of antiguides

Eric Anderson, Michael Jansen, Dan Botez, Luke Mawst, Thomas Roth, Jane Yang

Proceedings Volume 1417, (1991) https://doi.org/10.1117/12.43783

KEYWORDS: Modulation, Phase shift keying, Semiconductor lasers, Sensors, Free space optical communications, Chemical elements, Microwave radiation, Distortion, Reliability, Telecommunications

Read Abstract +

Proceedings Article | 1 May 1990 Paper

Stabilized in-phase-mode operation from monolithic antiguided diode laser arrays

Luke Mawst, Dan Botez, Phillip Hayashida, Michael Jansen, Gary Peterson, Thomas Roth, Jaroslava Z. Wilcox, Jane Yang

Proceedings Volume 1219, (1990) https://doi.org/10.1117/12.18252

KEYWORDS: Laser applications, Diffraction, Near field, Laser damage threshold, Waveguides, Cladding, Spatial filters, Semiconductor lasers, Optical components, Visibility

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Showing 5 of 80 publications

Proceedings Volume Editor (2)

SPIE Conference Volume | 6 June 2001

In-Plane Semiconductor Lasers V

SPIE Conference Volume | 18 April 2000

In-Plane Semiconductor Lasers IV

Conference Committee Involvement (26)

Novel In-Plane Semiconductor Lasers XXIV

27 January 2025 | San Francisco, California, United States

Semiconductor Lasers and Laser Dynamics XI

9 April 2024 | Strasbourg, France

Novel In-Plane Semiconductor Lasers XXIII

30 January 2024 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XXII

31 January 2023 | San Francisco, California, United States

Semiconductor Lasers and Laser Dynamics X

5 April 2022 | Strasbourg, France

Novel In-Plane Semiconductor Lasers XXI

25 January 2022 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XX

6 March 2021 | Online Only, California, United States

Semiconductor Lasers and Laser Dynamics IX

6 April 2020 | Online Only, France

Novel In-Plane Semiconductor Lasers XIX

3 February 2020 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XVIII

4 February 2019 | San Francisco, California, United States

Semiconductor Lasers and Laser Dynamics

23 April 2018 | Strasbourg, France

Novel In-Plane Semiconductor Lasers XVII

29 January 2018 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XVI

30 January 2017 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XV

15 February 2016 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XIV

9 February 2015 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XIII

3 February 2014 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XII

4 February 2013 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XI

23 January 2012 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers X

24 January 2011 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers IX

25 January 2010 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers VIII

26 January 2009 | San Jose, California, United States

Novel In-Plane Semiconductor Lasers VII

21 January 2008 | San Jose, California, United States

Novel In-Plane Semiconductor Lasers VI

22 January 2007 | San Jose, California, United States

Novel In-Plane Semiconductor Lasers V

23 January 2006 | San Jose, California, United States

In-Plane Semiconductor Lasers V

22 January 2001 | San Jose, CA, United States

In-Plane Semiconductor Lasers IV

24 January 2000 | San Jose, CA, United States

Showing 5 of 26 Conference Committees

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