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9 March 2022 Rigorous modeling of mid-IR QCLs with strong photon-induced carrier transport
Suraj Suri, Benjamin Knipfer, Jeremy D. Kirch, Luke J. Mawst, Thomas Grange, Dan Botez
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Proceedings Volume PC12021, Novel In-Plane Semiconductor Lasers XXI; PC120210G (2022) https://doi.org/10.1117/12.2610016
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
Accurate simulation of V-I characteristics for mid-IR quantum cascade lasers (QCLs) with photon-induced carrier transport (PICT) is achieved by using the non-equilibrium Green’s function method coupled with the interface-roughness scattering formalism taking into account graded interfaces and axial correlation lengths. Analysis of 4.9 µm- and 8.3 µm-emitting, buried-heterostructure (BH) QCLs reveals that PICT action reduces the differential resistance by a factor of 2.5 and increases the maximum-current density by ~ 30 % compared to conventional BH QCLs, which explains their record-high, single-facet wall-plug efficiency values (i.e., 27 % and 17 %). Interface grading allows obtaining emission wavelengths close to experiment.
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Suraj Suri, Benjamin Knipfer, Jeremy D. Kirch, Luke J. Mawst, Thomas Grange, and Dan Botez "Rigorous modeling of mid-IR QCLs with strong photon-induced carrier transport", Proc. SPIE PC12021, Novel In-Plane Semiconductor Lasers XXI, PC120210G (9 March 2022); https://doi.org/10.1117/12.2610016
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KEYWORDS
Quantum cascade lasers
Mid-IR
Photon transport
Scattering
Laser scattering
Quantum efficiency
Resistance
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