Paper
11 June 2003 Formation specifity of InAs/GaAs submonolayer superlattice
Ilja P. Soshnikov, Boris V. Volovik, Alexey R. Kovsh, Alexey E. Zhukov, Anrei F. Tsatsul'nikov, O. M. Gorbenko, N. N. Ledentsov, Victor M. Ustinov, P. Werner, N. D. Zakharov, D. Gerthsen
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Abstract
Heterostructures with submonolayer insertions attract interest due to optical properties and to possibility of the studying of the self-organization effect. Besides, investigation of SML heterostructures is retarded as consequence of problems of the structural and composition characterization. The situation is changed on account of development of quantitative methods for HREM image analysis. There formation of superlattice heterostructures with InAs submonolayer insertions in GaAs matrix and them optical properties are investigated in the work.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ilja P. Soshnikov, Boris V. Volovik, Alexey R. Kovsh, Alexey E. Zhukov, Anrei F. Tsatsul'nikov, O. M. Gorbenko, N. N. Ledentsov, Victor M. Ustinov, P. Werner, N. D. Zakharov, and D. Gerthsen "Formation specifity of InAs/GaAs submonolayer superlattice", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.511275
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KEYWORDS
Superlattices

Heterojunctions

Gallium arsenide

Optical properties

Image analysis

Indium arsenide

Digital signal processing

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