Resist evaluation at 50 nm in the EUV using interferometric spatial-frequency-doubled imaging

Michael D. Shumway; Patrick P. Naulleau; Kenneth A. Goldberg; Eric L. Snow; Jeffrey Bokor

doi:10.1117/12.484677

16 June 2003 Resist evauation at 50 nm in the EUV using interferometric spatial-frequency-doubled imaging

Michael D. Shumway, Patrick P. Naulleau, Kenneth A. Goldberg, Eric L. Snow, Jeffrey Bokor

Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003) https://doi.org/10.1117/12.484677
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

By using a spatial frequency doubling method, our 10x Schwarzschild optic can print high-contrast features at 50 nm with low line-edge roughness (LER). In this paper, we also present new techniques for evaluating photoresist at EUV wavelengths using our system. One method is used to determine the ultimate resolution of a resist through linewidth vs. dose measurements. Another is to investigate line-edge roughness properties by varying the aerial image contrast of a pattern. A novel filtering method is proposed that would allow multiple contrasts to be printed in a single exposure. This is achieved by varying the duty cycle and line/space transmission levels of the object grating. Since this is a single exposure technique it would allow for mroe controlled contrast tests when evaluating resists.

Citation Download Citation

Michael D. Shumway, Patrick P. Naulleau, Kenneth A. Goldberg, Eric L. Snow, and Jeffrey Bokor "Resist evauation at 50 nm in the EUV using interferometric spatial-frequency-doubled imaging", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.484677

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