Study on the recording mechanism of TeOx thin film

Qinghui Li; Donghong Gu; Fuxi Gan

doi:10.1117/12.510543

9 April 2003 Study on the recording mechanism of TeO_x thin film

Qinghui Li, Donghong Gu, Fuxi Gan

Proceedings Volume 5060, Sixth International Symposium on Optical Storage (ISOS 2002); (2003) https://doi.org/10.1117/12.510543
Event: Sixth International Symposium on Optical Storage (ISOS 2002), 2002, Wuhan, China

Abstract

Monolayer TeO_x thin films were deposited on K9 glass substrates or copper grids by vacuum evaporation. Structure of the as-deposited TeO_x thin film was determined by TEM and XPS. The TeO_x thin film was successfully recorded with a short-wavelength laser beam (514.5 nm). Atomic force microscopy (AFM) is used to study the microstructure of recorded marks. Micro-area morphology images show that the marks are deformed, and depressions and bulges have been imaged in the recorded marks. The level of the deformation is enhanced with the increase of writing power. AFM allows a precise determination of the mark size, the depression depth and the bulge height. The present setup allows the identification of individual marks through a specific location method and the correlation of the reflectivity contast, C, caused by a specific writing power to the morphology of the marks. According to the results of TEM analysis, there was no obvious difference between the phase state of as-deposited film and that of the recorded area. Based on the experimental results, the recording mechanism of TeO_x thin film was discussed.

Citation Download Citation

Qinghui Li, Donghong Gu, and Fuxi Gan "Study on the recording mechanism of TeO_x thin film", Proc. SPIE 5060, Sixth International Symposium on Optical Storage (ISOS 2002), (9 April 2003); https://doi.org/10.1117/12.510543

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