InGaAs/InP avalanche photodiode arrays for eye-safe three-dimensional imaging

John Christopher Dries; Tara Martin; Wei Huang; Michael J. Lange; Marshall J. Cohen

doi:10.1117/12.486325

10 October 2003 InGaAs/InP avalanche photodiode arrays for eye-safe three-dimensional imaging

John Christopher Dries, Tara Martin, Wei Huang, Michael J. Lange, Marshall J. Cohen

Proceedings Volume 5074, Infrared Technology and Applications XXIX; (2003) https://doi.org/10.1117/12.486325
Event: AeroSense 2003, 2003, Orlando, Florida, United States

Abstract

We report on recent progress in developing 2-dimensional arrays of InGaAs/InP avalanche photodiodes. Advances in compound semiconductor epitaxy and device processing technologies enable large (128x128) element focal plane arrays with breakdown voltage standard deviations < 0.3%. The uniformity in breakdown voltage simplifies readout integrated circuit designs, in that a single bias voltage may be used for all elements in the array. Each element in the array achieves responsivities greater than 10 A/W at a wavelength of 1550 nm, while maintaining dark currents less than 20 nA. The APD arrays stand to enable new cameras for such applications as three-dimensional imaging, and various other laser radar and communications systems. In particular, the improved responsivity of avalanche photodiodes over their pin photodiode counterparts can improve sensitivities by as much as 6 - 10 dB depending upon the readout integrated circuit bandwidth. So-called "flash" laser radar systems wherein a single high energy laser pulse is used to image a target require the extra sensitivity afforded by avalanche photodiodes due to the low return photon count from distant targets.

Citation Download Citation

John Christopher Dries, Tara Martin, Wei Huang, Michael J. Lange, and Marshall J. Cohen "InGaAs/InP avalanche photodiode arrays for eye-safe three-dimensional imaging", Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); https://doi.org/10.1117/12.486325

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